HY62V16100-(I)/HY62U16100-(I) Series
64Kx16bit CMOS SRAM
DESCRIPTION
FEATURES
The HY62V16100-(I)/HY62U16100-(I) is a high-
speed, low power and 1M bits CMOS SRAM
organized as 65,536 words by 16 bits. The
HY62V16100-(I)/ HY62U16100-(I) uses sixteen
common input and output lines and has an output
enable pin which operates faster than address
access time at a read cycle. The device is
fabricated using HYUNDAI's advanced CMOS
process and designed with high-speed low power
circuit technology. It is particulary well suited for
being used in high-density and low power system
applications.
·
·
·
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Data Byte Control
- LB : I/O1 ~ I/O8, UB : I/O9 ~ I/O16
Battery backup(L/LL-part)
- 2.0V(min) data retention
Standard pin configuration
- 44pin 400mil TSOP-II
·
·
(Standard and Reversed)
Product
No.
HY62V16100
HY62V16100-I
HY62U16100
HY62U16100-I
Supply
Voltage(V)
3.3
Speed
(ns)
85/100/120
85/100/120
100/120/150
100/120/150
Operation
Current(mA)
Standby Current(uA) Temperature.
L
LL
10
15
10
10
(°C)
5
5
5
5
50
50
50
50
0~70(Normal)
-40~85(E.T.)
0~70(Normal)
-40~85(E.T.)
3.3
3.0
3.0
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature
2. Current value is max.
PIN CONNECTION
BLOCK DIAGRAM
ROW
DECODER
A1~A7
A14
I/O1
A4
A3
A5
NC
A12
A13
A14
A15
/WE
I/O8
I/O7
NC
1
2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
A6
A11
A10
A9
A2
A7
3
A1
A0
/OE
/UB
/LB
A15
4
A8
NC
5
I/O8
I/O9
/CS
I/O1
I/O2
I/O3
I/O4
Vcc
GND
I/O5
I/O6
I/O7
I/O8
/WE
A15
A14
A13
A12
NC
6
A8
A9
I/O16
I/O15
I/O9
I/O10
I/O11
I/O12
Vcc
GND
I/O13
I/O14
I/O15
I/O16
/LB
7
8
I/O14 I/O6
9
MEMORY ARRAY
512x128x16
I/O13
I/O5
10
11
12
13
14
15
16
17
18
19
20
21
22
A10
A11
GND GND
Vcc
Vcc
I/O4
I/O3
I/O12
I/O11
A12
A13
I/O10 I/O2
8
I/O16
I/O9
NC
A8
I/O1
/CS
A0
7
6
5
/UB
/OE
A7
A6
A5
A9
A1
4
A0
A10
A11
NC
A2
3
2
A3
1
A4
/CS
/OE
/LB
/UB
/WE
TSOP-II(Standard)
TSOP-II(Reversed)
PIN DESCRIPTION
Pin Name
Pin Funtion
Chip Select
Write Enable
Output Enable
Low Byte Control(I/O1~I/O8)
Pin Name
I/O1~I/O16
A0~A15
Vcc
Pin Funtion
/CS
/WE
/OE
/LB
Data Input/Output
Address Input
Power(3.3V/3.0V)
Ground
Vss
/UB
Upper Byte Control(I/O9~I/O16) NC
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.07 /Jan.99
Hyundai Semiconductor