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HY62LF16201A-100I PDF预览

HY62LF16201A-100I

更新时间: 2024-09-25 15:34:23
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
10页 191K
描述
SRAM

HY62LF16201A-100I 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

HY62LF16201A-100I 数据手册

 浏览型号HY62LF16201A-100I的Datasheet PDF文件第2页浏览型号HY62LF16201A-100I的Datasheet PDF文件第3页浏览型号HY62LF16201A-100I的Datasheet PDF文件第4页浏览型号HY62LF16201A-100I的Datasheet PDF文件第5页浏览型号HY62LF16201A-100I的Datasheet PDF文件第6页浏览型号HY62LF16201A-100I的Datasheet PDF文件第7页 
HY62LF16201A Series  
128Kx16bit full CMOS SRAM  
Document Title  
128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM  
Revision History  
Revision No History  
Draft Date  
Remark  
05  
06  
Divide output load into two factors  
- tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW  
- Others  
Add marking information  
Change Part Number  
Dec.10. 2000 Final  
Jun.07. 2001  
- 2.5V Version : Q -> L  
- HY62QF16201A -> HY62LF16201A  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.06 /Jun. 2001  
Hynix Semiconductor