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HY5V56DF-8 PDF预览

HY5V56DF-8

更新时间: 2024-02-25 08:05:15
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器内存集成电路
页数 文件大小 规格书
14页 421K
描述
Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54, 13.50 X 8 MM, 0.80 MM PITCH, FBGA-54

HY5V56DF-8 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:BGA包装说明:FBGA, BGA54,9X9,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.92Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):125 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B54长度:13.5 mm
内存密度:268435456 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA54,9X9,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified刷新周期:8192
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.2 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

HY5V56DF-8 数据手册

 浏览型号HY5V56DF-8的Datasheet PDF文件第3页浏览型号HY5V56DF-8的Datasheet PDF文件第4页浏览型号HY5V56DF-8的Datasheet PDF文件第5页浏览型号HY5V56DF-8的Datasheet PDF文件第7页浏览型号HY5V56DF-8的Datasheet PDF文件第8页浏览型号HY5V56DF-8的Datasheet PDF文件第9页 
HY5V56D(L/S)F  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Rating  
Unit  
Ambient Temperature  
TA  
0 ~ 70  
°C  
Storage Temperature  
TSTG  
-55 ~ 125  
-1.0 ~ 4.6  
-1.0 ~ 4.6  
50  
°C  
Voltage on Any ball relative to VSS  
Voltage on VDD relative to VSS  
Short Circuit Output Current  
Power Dissipation  
VIN, VOUT  
VDD, VDDQ  
IOS  
V
V
mA  
PD  
1
W
Soldering Temperature Time  
TSOLDER  
260 10  
°C Sec  
Note : Operation at above absolute maximum rating can adversely affect device reliability.  
DC OPERATING CONDITION (TA= 0°C to 70°C)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Note  
Power Supply Voltage  
Input High voltage  
Input Low voltage  
VDD, VDDQ  
VIH  
3.0  
2.0  
3.3  
3.0  
0
3.6  
VDDQ + 0.3  
0.8  
V
V
V
1
1,2  
1,3  
VIL  
-0.3  
Note :  
1.All voltages are referenced to VSS = 0V  
2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.  
3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.  
AC OPERATING TEST CONDITION (TA= 0°C to 70°C, VDD=3.3±0.3V, VSS=0V)  
Parameter  
Symbol  
Value  
Unit  
Note  
AC Input High / Low Level Voltage  
VIH / VIL  
Vtrip  
2.4/0.4  
1.4  
1
V
V
Input Timing Measurement Reference Level Voltage  
Input Rise / Fall Time  
tR / tF  
Voutref  
CL  
ns  
V
Output Timing Measurement Reference Level Voltage  
Output Load Capacitance for Access Time Measurement  
1.4  
50  
pF  
1
Note :  
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details,  
refer to AC/DC output load circuit  
Rev. 0.3 / July 2004  
6

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