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HY5DU12822LT-H PDF预览

HY5DU12822LT-H

更新时间: 2024-01-06 23:41:21
品牌 Logo 应用领域
海力士 - HYNIX 时钟动态存储器双倍数据速率ISM频段光电二极管内存集成电路
页数 文件大小 规格书
37页 338K
描述
DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

HY5DU12822LT-H 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSSOP66,.46针数:66
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.83
访问模式:FOUR BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMON交错的突发长度:2,4,8
JESD-30 代码:R-PDSO-G66JESD-609代码:e6
长度:22.225 mm内存密度:536870912 bit
内存集成电路类型:DDR DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:66字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSSOP66,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:2.5 V
认证状态:Not Qualified刷新周期:8192
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:2,4,8最大待机电流:0.02 A
子类别:DRAMs最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN BISMUTH
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

HY5DU12822LT-H 数据手册

 浏览型号HY5DU12822LT-H的Datasheet PDF文件第2页浏览型号HY5DU12822LT-H的Datasheet PDF文件第3页浏览型号HY5DU12822LT-H的Datasheet PDF文件第4页浏览型号HY5DU12822LT-H的Datasheet PDF文件第5页浏览型号HY5DU12822LT-H的Datasheet PDF文件第6页浏览型号HY5DU12822LT-H的Datasheet PDF文件第7页 
HY5DU12422(L)T  
HY5DU12822(L)T  
HY5DU121622(L)T  
1st 512M DDR SDRAM  
HY5DU12422(L)T  
HY5DU12822(L)T  
HY5DU121622(L)T  
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.6/May. 02  
1

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DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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