Datasheet > HY57V281620ESTP-6

HY57V281620ESTP-6

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
13页	124K
描述
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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HY57V281620ESTP-6 数据手册

128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Document Title

4Bank x 2M x 16bits Synchronous DRAM

Revision History

Revision No.

History

Draft Date

Dec. 2004

Jan. 2005

Remark

1.0

1.1

First Version Release

1. Corrected PIN ASSIGNMENT A12 to NC

1. Changed IDD3P and IDD3PS 3mA to 5mA

1.2

Feb. 2005

2. Added Industrial Temperature (-40^oC to 85^oC)

1.3

1.4

Changed tOH(Only Symbol ‘H’): 2.5ns -> 2.7ns

Add Super Low Power-> IDD6: 500uA

Apr. 2005

Aug. 2005

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.4 / Aug. 2005

12 3 4 5 6 7...13

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型号	品牌	描述	获取价格	数据表
HY57V281620ESTP-7I	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE	获取价格
HY57V281620ESTP-H	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE	获取价格
HY57V281620ESTP-HI	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE	获取价格
HY57V281620ET	HYNIX	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O	获取价格
HY57V281620ET-5	HYNIX	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O	获取价格
HY57V281620ET-5I	HYNIX	Synchronous DRAM, 8MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54	获取价格