HY57V164010D
2 Banks x 2M x 4 Bit Synchronous DRAM
DESCRIPTION
The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory
applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of
2,097,152x4.
HY57V164010D is offering fully synchronous operation referenced to a positive edge clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high band-
width. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 1,2 or 3), the number of consecutive read or
write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipeline
design is not restricted by a `2N` rule.)
FEATURES
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Single 3.3V ± 0.3V power supply
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Auto refresh and self refresh
All device pins are compatible with LVTTL interface
4096 refresh cycles / 64ms
JEDEC standard 400mil 44pin TSOP-II with 0.8mm
of pin pitch
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
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All inputs and outputs referenced to positive edge of
system clock
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Programmable CAS Latency ; 1, 2, 3 Clocks
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Data mask function by DQM
Internal two banks operation
ORDERING INFORMATION
Part No.
Clock Frequency
Organization
Interface
Package
HY57V164010DTC-8
HY57V164010DTC-10P
HY57V164010DTC-10S
HY57V164010DTC-10
125MHz
100MHz
100MHz
100MHz
400mil
44pin TSOP II
2Banks x 2Mbits x 4
LVTTL
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied
Rev. 1.5/Dec.98
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