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HY51V65804ATC-50 PDF预览

HY51V65804ATC-50

更新时间: 2024-02-28 17:38:22
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 100K
描述
EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

HY51V65804ATC-50 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP32,.46
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.28Is Samacsys:N
访问模式:FAST PAGE WITH EDO最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:20.95 mm内存密度:67108864 bit
内存集成电路类型:EDO DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:32字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.0005 A
子类别:DRAMs最大压摆率:0.14 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

HY51V65804ATC-50 数据手册

 浏览型号HY51V65804ATC-50的Datasheet PDF文件第2页浏览型号HY51V65804ATC-50的Datasheet PDF文件第3页浏览型号HY51V65804ATC-50的Datasheet PDF文件第4页浏览型号HY51V65804ATC-50的Datasheet PDF文件第5页浏览型号HY51V65804ATC-50的Datasheet PDF文件第6页浏览型号HY51V65804ATC-50的Datasheet PDF文件第7页 
HY51V64804A,HY51V65804A  
8Mx8, Extended Data Out mode  
2nd Generation  
DESCRIPTION  
This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Extended Data Out mode CMOS  
DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process  
design allow this device to achieve high performance and low power dissipation. Optional features are access time(50 or  
60ns) and refresh cycle(8K ref. or 4K ref.)and package(SOJ or TSOP-ll) and power consumption (Normal or Low power  
with self refresh). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth,  
low power consumption and high reliability.  
FEATURES  
Ÿ Extended data out operation  
Ÿ JEDEC standard pinout  
Ÿ Read-modify-write capability  
32-pin plastic SOJ/TSOP-II (400mil)  
Ÿ Multi-bit parallel test capability  
Ÿ Single power supply of 3.3 ± 0.3V  
Ÿ LVTTL(3.3V) compatible inputs and outputs  
Ÿ Early write or output enable controlled write  
Ÿ /CAS-before-/RAS, /RAS-only, Hidden and  
Self refresh capability  
Ÿ Max. Active power dissipation  
Ÿ Fast access time and cycle time  
Speed  
50  
8K refresh  
4K refresh  
504mW  
Speed  
50  
tRAC  
50ns  
60ns  
tCAC  
13ns  
15ns  
tHPC  
20ns  
25ns  
396mW  
324mW  
60  
432mW  
60  
Ÿ Refresh cycles  
Part number  
HY51V64804A1)  
HY51V65804A2)  
Refresh  
Normal  
L-part  
8K  
4K  
64ms  
128ms  
1) Normal read / write, /RAS only refresh : 8K cycles / 64ms  
/CAS-before-/RAS, Hidden refresh : 4K cycles / 64ms  
2) Normal read / write, /RAS only refresh : 4K cycles / 64ms  
/CAS-before-/RAS, Hidden refresh  
: 4K cycles / 64ms  
ORDERING INFORMATION  
Part Name  
HY51V64804ATC  
HY51V64804ALTC  
HY51V64804ASLTC  
HY51V65804ATC  
HY51V65804ALTC  
Refresh  
Power  
Package  
8K  
8K  
8K  
4K  
4K  
4K  
32Pin SOJ/TSOP-II  
32Pin SOJ/TSOP-II  
32Pin SOJ/TSOP-II  
32Pin SOJ/TSOP-II  
32Pin SOJ/TSOP-II  
32Pin SOJ/TSOP-II  
L-part  
*SL-part  
L-part  
HY51V65804ASLTC  
*SL-part  
*SL : Self refresh with low power.  
This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of  
circuits described. No patent licences are implied  
Hyundai Semiconductor  
Rev. 12/Sep.98  
1

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