Datasheet > HY51V7403HG

HY51V7403HG

更新时间： 2024-01-08 09:57:05

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器
页数	文件大小	规格书
11页	98K
描述
4M x 4Bit EDO DRAM

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中文翻译

获取价格

数据手册

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HY51V7403HG 数据手册

HY51V(S)17403HG/HGL

4M x 4Bit EDO DRAM

PRELIMINARY

DESCRIPTION

The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.

HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utiliz-

ing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page-

Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be

packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high sys-

tem bit densities and is compatible with widely available automated testing and insertion equipment.

System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability

with high performance logic families such as Schottky TTL.

FEATURES

•

Extended Data Out Mode capability

Read-modify-write capability

Multi-bit parallel test capability

TTL(3.3V) compatible inputs and outputs

/RAS only, CAS-before-/RAS, Hidden and self

refresh(L-version) capability

•

JEDEC standard pinout

24(26)pin plastic SOJ / 24(26)pin TSOP-II

Single power supply of 3.3V +/- 0.3V

Battery back up operation(L-version)

•

Fast access time and cycle time

Part No

tRAC

tCAC

tRC

tHPC

HY51V(S)17403HG/HGL-5

HY51V(S)17403HG/HGL-6

HY51V(S)17403HG/HGL-7

50ns

60ns

70ns

13ns

15ns

18ns

84ns

104ns

124ns

20ns

25ns

30ns

•

Power dissipation

•

Refresh cycle

Part No

50ns

60ns

70ns

Ref

Normal

L-part

Active

432mW

369mW

360mW

HY51V17403HG

HY51V17403HGL

32ms

7.2mW(CMOS level Max)

0.36mW (L-version : Max)

128ms

Standby

ORDERING INFORMATION

Part Number

Access Time

Package

HY51V(S)17403HGJ/HG(L)J-5

HY51V(S)17403HGJ/HG(L)J-6

HY51V(S)17403HGJ/HG(L)J-7

50ns

60ns

70ns

300mil 24(26)pin SOJ

HY51V(S)17403HGT/HG(L)T-5

HY51V(S)17403HGT/HG(L)T-6

HY51V(S)17403HGT/HG(L)T-7

50ns

60ns

70ns

300mil 24(26)pin TSOP-II

(S) : Self refresh,

(L) : Low power

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.0.1/Apr.01

12 3 4 5 6 7...11

中文翻译

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与HY51V7403HG相关器件

型号	品牌	获取价格	描述	数据表
HY51VS16160HGLJ-7	HYNIX	获取价格	Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
HY51VS16160HGLT-5	HYNIX	获取价格	Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
HY51VS16160HGLT-7	HYNIX	获取价格	Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
HY51VS16400HGLJ-5	HYNIX	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
HY51VS16400HGLJ-6	HYNIX	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
HY51VS16400HGLJ-7	HYNIX	获取价格	Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
HY51VS16403HGLT-5	HYNIX	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
HY51VS16403HGLT-6	HYNIX	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
HY51VS17403HG	HYNIX	获取价格	4M x 4Bit EDO DRAM
HY51VS17403HGLT-7	HYNIX	获取价格	EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24

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