Datasheet > HY51V65173HGT-6I

HY51V65173HGT-6I

更新时间： 2023-02-26 15:53:06

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器光电二极管
页数	文件大小	规格书
11页	83K
描述
EDO DRAM, 4MX16, 60ns, CMOS, PDSO50,

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中文翻译

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数据手册

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HY51V65173HGT-6I 数据手册

HY51V65173HGJ-45/5/6I

HY51V65173HGT-45/5/6I

4M x 16Bit EDO DRAM ET Part

PRELIMINARY

DESCRIPTION

This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out

mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera-

tion. The advanced circuit and process allow this device to achieve high performance and low power dissi-

pation. Features are access time(45ns or 50ns) and refresh cycle(4K ref) and power consumption(Normal

or low power with self refresh).

Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to

achieve high speed access and high reliability

FEATURES

•

Extended data out operation

Read-modify-write capability

Multi-bit parallel test capability

LVTTL(3.3V) compatible inputs and outputs

/RAS only, CAS-before-/RAS, Hidden and self

refresh(L-version) capability

•

JEDEC standard pinout

50pin plastic SOJ/TSOP-II(400mil)

Single power supply of 3.3V +/- 10%

Battery back up operation(L-version)

•

Fast access time and cycle time

Part No

tRAC

tAA

tCAC

tRC

tHPC

HY51V65173HG-45I

HY51V65173HG-5I

HY51V65173HG-6I

45ns

50ns

60ns

23ns

25ns

30ns

12ns

13ns

15ns

74ns

84ns

17ns

20ns

25ns

104ns

•

Power dissipation

•

Refresh cycle

Part No

45ns

50ns

60ns

Ref

Normal

L-part

Active

468mW

432mW

396mW

HY51V65173HG*

HY51V65173HGL*

4K Ref

64ms

1.8mW(CMOS level Max)

0.72mW (L-version : Max)

128ms

Standby

* : /RAS only, CBR and hidden refresh

ODERING INFORMATION

Part Number

Access Time

Package

HY51V65173HGJ-45

HY51V65173HGJ-5

HY51V65173HGJ-6

45ns

50ns

60ns

400mil 50pin SOJ

HY51V65173HGT-45I

HY51V65173HGT-5I

HY51V65173HGT-6I

45ns

50ns

60ns

400mil 50pin TSOP-II

(S) : Self refresh,

(L) : Low power

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev.0.0/Jan.01

12 3 4 5 6 7...11

中文翻译

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与HY51V65173HGT-6I相关器件

型号	品牌	获取价格	描述	数据表
HY51V65400HG	ETC	获取价格	16Mx4\|3.3V\|4K\|45\|FP/EDO DRAM - 64M
HY51V65400HGJ-45	HYNIX	获取价格	Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
HY51V65400HGJ-5	HYNIX	获取价格	Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
HY51V65400HGJ-6	HYNIX	获取价格	Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
HY51V65400HGT-45	HYNIX	获取价格	Fast Page DRAM, 16MX4, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
HY51V65400HGT-5	HYNIX	获取价格	Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
HY51V65400HGT-6	HYNIX	获取价格	Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
HY51V65400JC-50	HYNIX	获取价格	Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
HY51V65400JC60	ETC	获取价格	x4 Fast Page Mode DRAM
HY51V65400JC-60	HYNIX	获取价格	Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

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