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HY29F400TR70 PDF预览

HY29F400TR70

更新时间： 2022-11-25 13:32:14
品牌 Logo 应用领域
海力士 - HYNIX /
页数 文件大小 规格书
40页 508K
描述
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

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中文翻译

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HY29F400TR70 数据手册

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HY29F400  
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory  
KEY FEATURES  
n 5 Volt Read, Program, and Erase  
– Minimizes system-level power requirements  
n High Performance  
– Access times as fast as 45 ns  
n Low Power Consumption  
– 20 mA typical active read current in byte  
mode, 28 mA typical in word mode  
– 30 mA typical program/erase current  
– 5 µA maximum CMOS standby current  
n Compatible with JEDEC Standards  
– Package, pinout and command-set  
compatible with the single-supply Flash  
device standard  
n Sector Protection  
– Any combination of sectors may be  
locked to prevent program or erase  
operations within those sectors  
n Temporary Sector Unprotect  
– Allows changes in locked sectors  
(requires high voltage on RESET# pin)  
n Internal Erase Algorithm  
– Automatically erases a sector, any  
combination of sectors, or the entire chip  
n Internal Programming Algorithm  
– Automatically programs and verifies data  
at a specified address  
– Provides superior inadvertent write  
protection  
n Fast Program and Erase Times  
– Byte programming time: 7 µs typical  
– Sector erase time: 1.0 sec typical  
– Chip erase time: 11 sec typical  
n Data# Polling and Toggle Status Bits  
– Provide software confirmation of  
completion of program or erase  
operations  
n Ready/Busy# Output (RY/BY#)  
– Provides hardware confirmation of  
completion of program and erase  
operations  
n Sector Erase Architecture  
– Boot sector architecture with top and  
bottom boot block options available  
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte  
and seven 64 Kbyte sectors in byte mode  
– One 8 Kword, two 4 Kword, one 16 Kword  
and seven 32 Kword sectors in word mode  
– A command can erase any combination of  
sectors  
– Supports full chip erase  
n Erase Suspend/Resume  
n 100,000 Program/Erase Cycles Minimum  
n Space Efficient Packaging  
– Available in industry-standard 44-pin  
PSOP and 48-pin TSOP and reverse  
TSOP packages  
– Temporarily suspends a sector erase  
operation to allow data to be read from, or  
programmed into, any sector not being  
erased  
GENERAL DESCRIPTION  
LOGIC DIAGRAM  
The HY29F400 is a 4 Megabit, 5 volt only CMOS  
Flash memory organized as 524,288 (512K) bytes  
or 262,144 (256K) words. The device is offered in  
industry-standard 44-pin PSOP and 48-pin TSOP  
packages.  
18  
8
7
A[17:0]  
CE#  
DQ[7:0]  
DQ[14:8]  
The HY29F400 can be programmed and erased  
in-system with a single 5-volt VCC supply. Inter-  
nally generated and regulated voltages are pro-  
vided for program and erase operations, so that  
the device does not require a high voltage power  
supply to perform those functions. The device can  
also be programmed in standard EPROM pro-  
grammers. Access times as fast as 55 ns over  
the full operating voltage range of 5.0 volts ± 10%  
are offered for timing compatibility with the zero  
wait state requirements of high speed micropro-  
OE#  
DQ[15]/A-1  
W E#  
RESET#  
BYTE#  
RY/BY#  
Revision 5.2, May 2001  
1234567...40

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与HY29F400TR70相关器件

型号 品牌 获取价格 描述 数据表
HY29F400TR-70 HYNIX

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 		x8/x16 Flash EEPROM
HY29F400TR-70E HYNIX

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 		Flash, 256KX16, 70ns, PDSO48, TSOP-48
HY29F400TR-70I HYNIX

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 		Flash, 256KX16, 70ns, PDSO48, REVERSE, TSOP-48
HY29F400TR90 HYNIX

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 		4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400TR-90 HYNIX

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 		x8/x16 Flash EEPROM
HY29F400TR-90E HYNIX

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 		Flash, 512KX8, 90ns, PDSO48, REVERSE, TSOP-48
HY29F400TR-90I HYNIX

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 		Flash, 256KX16, 90ns, PDSO48, REVERSE, TSOP-48
HY29F400TT-12E HYNIX

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 		Flash, 512KX8, 120ns, PDSO48, TSOP-48
HY29F400TT-15I HYNIX

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 		Flash, 512KX8, 150ns, PDSO48, TSOP-48
HY29F400TT45 HYNIX

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 		4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

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