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HWC30NC PDF预览

HWC30NC

更新时间: 2024-09-27 03:43:11
品牌 Logo 应用领域
汉威 - HW 晶体晶体管放大器
页数 文件大小 规格书
2页 84K
描述
C-Band Power FET Non-Via Hole Chip

HWC30NC 数据手册

 浏览型号HWC30NC的Datasheet PDF文件第2页 
HWC30NC  
C-Band Power FET Non-Via Hole Chip  
Autumn 2002 V1  
Features  
Outline Dimensions  
Low Cost GaAs Power FET  
860  
650  
Class A or Class AB Operation  
11 dB Typical Gain at 4 GHz  
5V to 10V Operation  
S o u r c e  
1
2
3
4
5
6
Description  
430  
210  
The HWC30NC is a medium power GaAs FET  
designed for various L-band & S-band  
applications.  
S o u r c e  
Absolute Maximum Ratings  
0
VDS  
VGS  
ID  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
+15V  
-5V  
0.0  
58.5  
344.5 400.0  
IDSS  
IG  
Gate Current  
3mA  
Units: µm  
Thickness: 100 5  
Chip size 50  
Bond Pads 1-3 (Gate): 60 x 60  
Bond Pads 4-6 (Drain): 60 x 60  
TCH  
TSTG  
Channel Temperature  
Storage Temperature  
Power Dissipation  
175 C  
°
-65 to +175 C  
°
*
PT  
6W  
* mounted on an infinite heat sink  
Electrical Specifications  
(TA=25 C) f =4 GHz for all RF Tests  
°
Symbol  
Parameters & Conditions  
Saturated Current at VDS=3V, VGS=0V  
Units  
Min.  
Typ.  
Max.  
IDSS  
mA  
V
500  
600  
900  
VP  
Pinch-off Voltage at VDS=3V, ID=30mA  
Transconductance at VDS=3V, ID=300mA  
-3.5  
-
-2.0  
300  
30  
-1.5  
mS  
dBm  
dB  
-
-
-
-
g
m
Power Output at Test Points  
VDS=10V, ID=0.5 IDSS  
P1dB  
G1dB  
PAE  
29  
9
Gain at 1dB Compression Point  
VDS=10V, ID=0.5 IDSS  
10  
Power-Added Efficiency (POUT = P1dB  
VDS=10V, ID=0.5 IDSS  
)
%
30  
35  
Small Signal Common Source Scattering Parameters  
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512  
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.  

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