HWC30NC
C-Band Power FET Non-Via Hole Chip
Autumn 2002 V1
Features
Outline Dimensions
Low Cost GaAs Power FET
•
•
•
•
860
650
Class A or Class AB Operation
11 dB Typical Gain at 4 GHz
5V to 10V Operation
S o u r c e
1
2
3
4
5
6
Description
430
210
The HWC30NC is a medium power GaAs FET
designed for various L-band & S-band
applications.
S o u r c e
Absolute Maximum Ratings
0
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current
+15V
-5V
0.0
58.5
344.5 400.0
IDSS
IG
Gate Current
3mA
Units: µm
Thickness: 100 5
Chip size 50
Bond Pads 1-3 (Gate): 60 x 60
Bond Pads 4-6 (Drain): 60 x 60
TCH
TSTG
Channel Temperature
Storage Temperature
Power Dissipation
175 C
°
-65 to +175 C
°
*
PT
6W
* mounted on an infinite heat sink
Electrical Specifications
(TA=25 C) f =4 GHz for all RF Tests
°
Symbol
Parameters & Conditions
Saturated Current at VDS=3V, VGS=0V
Units
Min.
Typ.
Max.
IDSS
mA
V
500
600
900
VP
Pinch-off Voltage at VDS=3V, ID=30mA
Transconductance at VDS=3V, ID=300mA
-3.5
-
-2.0
300
30
-1.5
mS
dBm
dB
-
-
-
-
g
m
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
P1dB
G1dB
PAE
29
9
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
10
Power-Added Efficiency (POUT = P1dB
VDS=10V, ID=0.5 IDSS
)
%
30
35
Small Signal Common Source Scattering Parameters
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.