Datasheet > HVV1214-140

HVV1214-140

更新时间： 2022-02-26 13:43:23

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HVV1214-140 数据手册

HVV1214-140 (Preliminary Datasheet)

L-Band Pulsed Power Transistor

1200-1400 MHz, 200µs Pulse, 10% Duty Cycle

For Ground Based Radar Applications

Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width

and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz.

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Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and

10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz.

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