Datasheet > HT8KE6

HT8KE6

更新时间： 2024-03-03 10:11:20

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	2827K
描述
HT8KE6 is a low on-resistance MOSFET ideal for switching applications.

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HT8KE6 数据手册

HT8KE6

100V Nch+Nch Power MOSFET

Datasheet

llOutline

V_DSS

100V

57mΩ

±13A

14W

R_DS(on)(Max.)

HSMT8

I_D

P_D

llFeatures

1) Low on - resistance

llInner circuit

2) High Power small mold Package (HSMT8)

3) Pb-free plating ; RoHS compliant

4) Halogen Free

llPackaging specifications

Packing

Embossed

Tape

llApplication

Reel size (mm)

330

Switching

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

3000

TB1

HT8KE6

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified) <Tr1 and Tr2>

Parameter

Drain - Source voltage

Symbol

V_DSS

Value

100

Unit

T_c= 25°C

T_a= 25°C

I_D

±13

Continuous drain current

I_D

±4.5

±18

I_DP

Pulsed drain current

V_GSS

Gate - Source voltage

±20

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

4.5

E_AS

1.6

P_D

Power dissipation (total)

P_D

2.0

T_j

Junction temperature

150

℃

T_stg

Operating junction and storage temperature range

-55 to +150

www.rohm.com

1/11

20230328 - Rev.001

12 3 4 5 6 7...14

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