Datasheet > HT8KE6

HT8KE6

更新时间： 2024-03-03 10:11:20

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	2827K
描述
HT8KE6 is a low on-resistance MOSFET ideal for switching applications.

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HT8KE6 数据手册

HT8KE6

Datasheet

llThermal resistance

Values

Parameter

Symbol

Unit

Min. Typ. Max.

R_thJC

Thermal resistance, junction - case

Thermal resistance, junction - ambient

8.7

℃/W

R_thJA

62.5 ℃/W

llElectrical characteristics (T_a= 25°C) <Tr1 and Tr2>

Values

Parameter

Symbol

V_(BR)DSS

Conditions

Unit

Min. Typ. Max.

Drain - Source breakdown

voltage

= 0V, I = 1mA

100

ΔV

I = 1mA

(BR)DSS

Breakdown voltage

temperature coefficient

mV/℃

ΔT

referenced to 25℃

Zero gate voltage

drain current

I_DSS

I_GSS

= 100V, V = 0V

μA

Gate - Source

leakage current

= ±20V, V = 0V

±100

2.5

Gate threshold

voltage

V_GS(th)

= V , I = 1mA

1.0

GS D

ΔV_GS(th)

I = 1mA

Gate threshold voltage

temperature coefficient

-4.0

mV/℃

ΔT

referenced to 25℃

= 10V, I = 4.5A

Static drain - source

on - state resistance

R_DS(on)

mΩ

= 4.5V, I = 4.5A

R_G

Gate resistance

2.2

Forward Transfer

Admittance

|Y |^*5

= 5V, I = 4.5A

3.8

*1 T = 25℃, Limited only by maximum temperature allowed.

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 L ⋍ 0.1mH, V = 50V, R = 25Ω, Starting T = 25℃ Fig.3-1,3-2

*4 Mounted on a Cu board (40×40×0.8mm)

*5 Pulsed

www.rohm.com

2/11

20230328 - Rev.001

123 4 5 6 7...14

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