Datasheet > HT8KE6

HT8KE6

更新时间： 2024-03-03 10:11:20

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	2827K
描述
HT8KE6 is a low on-resistance MOSFET ideal for switching applications.

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HT8KE6 数据手册

HT8KE6

Datasheet

llElectrical characteristics (T_a= 25°C) <Tr1 and Tr2>

Values

Typ.

305

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_iss

C_oss

C_rss

Input capacitance

= 0V

= 50V

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

f = 1MHz

⋍ 50V,V = 10V

t_d(on)

7.5

t_r^*5

I = 2.25A

8.5

t_d(off)

R = 22.2Ω

Turn - off delay time

Fall time

20.0

7.0

t_f^*5

R = 10Ω

llGate charge characteristics (T_a= 25°C) <Tr1 and Tr2>

Values

Typ.

6.7

Parameter

Symbol

Conditions

Unit

Min.

Max.

= 10V

= 4.5V

Q_g

Total gate charge

3.3

⋍ 50V

I = 4.5A

Q_gs

Gate - Source charge

Gate - Drain charge

1.0

Q_gd

1.2

llBody diode electrical characteristics (Source-Drain) (T_a= 25°C)

Values

Parameter

Symbol

I_S

Conditions

Unit

Min.

Typ.

Max.

1.67

1.2

Continuous forward current

Pulse forward current

Forward voltage

T = 25℃

I_SP

V_SD

= 0V, I = 1.67A

t_rr

Reverse recovery time

Reverse recovery charge

I = 4.5A, V = 0V

di/dt = 100A/μs

Q_rr

www.rohm.com

3/11

20230328 - Rev.001

1 234 5 6 7...14

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