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HSMS-2864-BLK PDF预览

HSMS-2864-BLK

更新时间: 2024-01-23 02:13:46
品牌 Logo 应用领域
安捷伦 - AGILENT 二极管微波脉冲光电二极管
页数 文件大小 规格书
6页 154K
描述
SILICON, UHF-C BAND, MIXER DIODE, SOT-23, 3 PIN

HSMS-2864-BLK 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5
配置:COMMON CATHODE, 2 ELEMENTS最大二极管电容:0.3 pF
二极管元件材料:SILICON二极管类型:MIXER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
脉冲输入最大功率:0.25 W认证状态:Not Qualified
表面贴装:YES技术:SCHOTTKY
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HSMS-2864-BLK 数据手册

 浏览型号HSMS-2864-BLK的Datasheet PDF文件第1页浏览型号HSMS-2864-BLK的Datasheet PDF文件第2页浏览型号HSMS-2864-BLK的Datasheet PDF文件第4页浏览型号HSMS-2864-BLK的Datasheet PDF文件第5页浏览型号HSMS-2864-BLK的Datasheet PDF文件第6页 
3
Absolute Maximum Ratings, Ta = +25°C, Single Diode  
Symbol  
Parameter  
Absolute Maximum[1]  
HSMS-285x  
HSMS-286x  
250 mW  
4.0 V  
PT  
PIV  
Total Device Dissipation[2]  
Peak Inverse Voltage  
Junction Temperature  
Storage Temperature  
Operating Temperature  
75 mW  
2.0 V  
TJ  
150°C  
150°C  
TSTG  
TOP  
-65°C to 150°C -65°C to 150°C  
-65°C to 150°C -65°C to 150°C  
Notes:  
1. Operation in excess of any one of these conditions may result in  
permanent damage to the device.  
2. CW Power Dissipation at TLEAD = +25°C. Derate linearly to zero at  
maximum rated temperature.  
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.  
Equivalent Circuit Model  
SPICE Parameters  
HSMS-2850, HSMS-2860;  
Singles  
Parameter Units  
HSMS-285X HSMS-286X  
BV  
CJ0  
V
pF  
eV  
A
3.8  
0.18  
7.0  
0.18  
0.08 pF  
EG  
0.69  
0.69  
IBV  
3 x 10E-4  
3 x 10E-6  
1.06  
10E-5  
5.0 x 10E-8  
1.08  
R
IS  
A
2 nH  
j
N
R
S
RS  
25  
5.0  
PB (VJ)  
PT (XTI)  
M
V
0.35  
0.65  
2
2
0.5  
0.5  
0.18 pF  
RS = series resistance (see Table of SPICE parameters)  
8.33 X 10-5 nT  
Rj =  
Ib + Is  
where  
Ib = externally applied bias current in amps  
Is = saturation current (see table of SPICE parameters)  
T = temperature, °K  
n = identity factor (see table of SPICE parameters)  

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