HSM198STR

更新时间： 2024-09-25 13:08:27

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HSM198STR 数据手册

HSM198S

Silicon Schottky Barrier Diode forVarious Detector,

High speed switching

ADE-208-090B (Z)

Rev. 2

Jun. 1993

Features

•

Detection efficiency is very good.

Small temperature coefficient.

HSM198S which is interconnected in series configuration is designed for balanced mixer use.

MPAK package is suitable for high density surface mounting and high speed assembly.

Ordering Information

Type No.

Laser Mark

Package Code

HSM198S

MPAK

Pin Arrangement

(Top View)

Cathode 2

Anode 1

Cathode 1

Anode 2

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
HSM198STR-E	RENESAS	获取价格	SILICON, MIXER DIODE
HSM21PT	CHENMKO	获取价格	HIGH EFFICIENCY SILICON RECTIFIER
HSM221C	RENESAS	获取价格	Silicon Epitaxial Planar Diode for High Speed Switching
HSM221C	HITACHI	获取价格	Silicon Epitaxial Planar Diode for High Speed Switching
HSM221CTL	RENESAS	获取价格	0.1A, SILICON, SIGNAL DIODE
HSM221CTL-E	RENESAS	获取价格	暂无描述
HSM221CTR	HITACHI	获取价格	Rectifier Diode, 1 Element, 0.1A, Silicon
HSM221CTR-E	RENESAS	获取价格	暂无描述
HSM223C	HITACHI	获取价格	Silicon Epitaxial Planar Diode for High Speed Switching
HSM223C	RENESAS	获取价格	Silicon Epitaxial Planar Diode for High Speed Switching