Datasheet > HS9-26CT32RH

HS9-26CT32RH

更新时间： 2024-01-14 13:04:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
3页	47K
描述
Radiation Hardened Quad Differential Line Receiver

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技术参数
数据手册

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HS9-26CT32RH 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFP
包装说明：	DFP, FL16,.3	针数：	16
Reach Compliance Code：	compliant	ECCN代码：	USML XV(E)
HTS代码：	8542.39.00.01	风险等级：	5.18
输入特性：	DIFFERENTIAL SCHMITT TRIGGER	接口集成电路类型：	LINE RECEIVER
接口标准：	EIA-422	JESD-30 代码：	R-CDFP-F16
JESD-609代码：	e3	功能数量：	4
端子数量：	16	最高工作温度：	125 °C
最低工作温度：	-55 °C	最大输出低电流：	0.006 A
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DFP
封装等效代码：	FL16,.3	封装形状：	RECTANGULAR
封装形式：	FLATPACK	峰值回流温度（摄氏度）：	NOT APPLICABLE
电源：	5 V	认证状态：	Not Qualified
最大接收延迟：		接收器位数：	1
筛选级别：	MIL-PRF-38535 Class T	座面最大高度：	2.92 mm
子类别：	Line Driver or Receivers	标称供电电压：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	MILITARY	端子面层：	MATTE TIN
端子形式：	FLAT	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT APPLICABLE
总剂量：	100k Rad(Si) V	宽度：	6.73 mm
Base Number Matches：	1

HS9-26CT32RH 数据手册

HS-26CT32RH-T

Die Characteristics

DIE DIMENSIONS:

BACKSIDE FINISH:

2140µm x 3290µm x 533µm ±25.4µm

(85 x 130 x 21mils ±1mil)

Silicon

PASSIVATION:

METALLIZATION:

M1: Mo/Tiw

Type: SiO

Thickness: 8kÅ ±1kÅ

Thickness: 5800Å

M2: Al/Si/Cu

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm

Thickness: 10kÅ ±1kÅ

TRANSISTOR COUNT:

SUBSTRATE POTENTIAL:

315

Internally connected to V . May be left ﬂoating.

PROCESS:

Radiation Hardened CMOS, AVLSI

Metallization Mask Layout

HS-26CT32RH-T

AIN

(1)

(16)

BIN

(15)

(14) BIN

AIN (2)

(13) BOUT

(12) ENAB

AOUT (3)

ENAB (4)

(11) DOUT

COUT (5)

(10) DIN

CIN (6)

(7)

CIN

(8)

GND

(9)

DIN

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