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HS9-2100RH/PROTO PDF预览

HS9-2100RH/PROTO

更新时间： 2024-02-03 17:40:41
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动接口集成电路驱动器
页数 文件大小 规格书
2页 76K
描述
1A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16

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HS9-2100RH/PROTO 技术参数

生命周期：Obsolete零件包装代码：DFP
包装说明：DFP,针数：16
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
高边驱动器：YES接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：R-CDFP-F16功能数量：1
端子数量：16最高工作温度：125 °C
最低工作温度：-55 °C标称输出峰值电流：1 A
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DFP
封装形状：RECTANGULAR封装形式：FLATPACK
认证状态：Not Qualified座面最大高度：2.92 mm
最大供电电压：20 V最小供电电压：12 V
表面贴装：YES温度等级：MILITARY
端子形式：FLAT端子节距：1.27 mm
端子位置：DUAL宽度：6.73 mm
Base Number Matches：1

HS9-2100RH/PROTO 数据手册

 浏览型号HS9-2100RH/PROTO的Datasheet PDF文件第2页 
HS-2100RH  
Data Sheet  
June 1999  
File Number 4562.3  
Radiation Hardened High Frequency  
Half Bridge Driver  
Features  
• Electrically Screened to DESC SMD # 5962-99536  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
The Radiation Hardened HS-2100RH is a high frequency,  
100V Half Bridge N-Channel MOSFET Driver IC, which is a  
functional, pin-to-pin replacement for the Intersil HIP2500  
and the industry standard 2110 types. The low-side and  
high-side gate drivers are independently controlled. This  
gives the user maximum flexibility in dead-time selection and  
driver protocol.  
5
- Maximum Total Dose . . . . . . . . . . . . . .3 x 10 RAD(SI)  
- DI RSG Process Provides Latch-up Immunity  
- Vertical Architecture Provides Low Dose Rate Immunity  
• Bootstrap Supply Max Voltage to 120V  
In addition, the device has on-chip error detection and  
correction circuitry, which monitors the state of the high-side  
latch and compares it to the HIN signal. If they disagree, a  
set or reset pulse is generated to correct the high-side latch.  
This feature protects the high-side latch from SEUs.  
• Drives 1000pF Load at 1MHz with Rise and Fall Times of  
45ns (Typ)  
• 1A (Typ) Peak Output Current  
• Independent Inputs for Non-Half Bridge Topologies  
• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)  
Undervoltage on the high-side supply forces HO low. When  
that supply returns to a valid voltage, HO will go to the state  
of HIN. Undervoltage on the low-side supply forces both LO  
and HO low. When that supply becomes valid, LO returns to  
the LIN state and HO returns to the HIN state.  
• Operates with V  
DD  
= V Over 12V to 20V Range  
CC  
• Supply Undervoltage Protection  
Applications  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
• High Frequency Switch-Mode Power Supplies  
• Drivers for Inductive Loads  
• DC Motor Drivers  
Detailed Electrical Specifications for the HS-2100RH are  
contained in SMD 5962-99536. A “hot-link” is provided  
on our homepage for downloading.  
Pinout  
www.intersil.com/spacedefense/space.asp  
HS-2100RH  
FLATPACK (CDFP4-F16)  
TOP VIEW  
This link will not be available until the SMD is finalized.  
Ordering Information  
LO  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
NC  
INTERSIL MKT.  
NUMBER  
TEMP.  
COM  
V
SS  
o
ORDERING NUMBER  
5962F9953601VXC  
5962F9953601QXC  
HS9-2100RH/Proto  
RANGE ( C)  
-55 to 125  
-55 to 125  
-55 to 125  
V
LIN  
SD  
CC  
HS9-2100RH-Q  
HS9-2100RH-8  
HS9-2100RH/Proto  
NC  
NC  
VS  
VB  
HO  
HIN  
V
DD  
NC  
NC  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
1
12

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