HS817, HS817G, HS817B, HS817BG
www.vishay.com
Vishay Semiconductors
Optocoupler with Transistor Output
FEATURES
C
4
E
3
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
2
1
17197_7
• Rated recurring peak voltage (repetitive)
VIORM = 850 Vpeak
A
C
• Creepage current resistance according to IEC 112,
comparative tracking index: CTI 250
17197_4
• Thickness through insulation 0.4 mm
• Isolation materials according to UL 94 V-O
• Pollution degree 2 (resp. IEC 664)
DESCRIPTION
The HS817 series consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4-lead plastic dual inline package.
• Climatic classification 55/100/21 (IEC 68 part 1)
• Low temperature coefficient of CTR
AGENCY APPROVALS
• G = leadform 10.16 mm; provides creepage distance
> 8 mm, suffix letter “G” is not marked on the optocoupler
• BSI: EN 60065, EN 60950-1:2006
• FIMKO
• UL file no. E52744
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• cUL tested to CSA 22.2 bulletin 5A
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
ORDERING INFORMATION
DIP-#
DIP-#, 400 mil
10.16 mm
H
S
8
1
7
x
x
PART NUMBER
CTR
BIN
PACKAGE
OPTION
7.62 mm
AGENCY CERTIFIED/PACKAGE
UL, cUL, BSI, FIMKO
DIP-4
CTR (%)
100 to 300
HS817
130 to 260
HS817B
DIP-4, 400 mil
HS817G
HS817BG
Notes
•
•
G = leadform 10.16 mm; G is not marked on the body.
For additional information on the available options refer to option information.
Rev. 1.2, 27-Jul-11
Document Number: 83548
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000