Datasheet > HS1-303BRH/PROTO

HS1-303BRH/PROTO

更新时间： 2024-01-16 22:18:07

品牌	Logo	应用领域
瑞萨 - RENESAS		光电二极管
页数	文件大小	规格书
5页	196K
描述
DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP14, SBDIP-14

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技术参数
数据手册

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HS1-303BRH/PROTO 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	DIP	包装说明：	DIP,
针数：	14	Reach Compliance Code：	compliant
HTS代码：	8542.39.00.01	风险等级：	5.6
Is Samacsys：	N	模拟集成电路 - 其他类型：	SPDT
JESD-30 代码：	R-CDIP-T14	JESD-609代码：	e4
标称负供电电压 (Vsup)：	-12 V	信道数量：	1
功能数量：	2	端子数量：	14
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装代码：	DIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	5.08 mm	标称供电电压 (Vsup)：	12 V
表面贴装：	NO	技术：	CMOS
温度等级：	MILITARY	端子面层：	Gold (Au)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	7.62 mm	Base Number Matches：	1

HS1-303BRH/PROTO 数据手册

HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH

Substrate:

Die Characteristics

DIE DIMENSIONS:

Radiation Hardened Silicon Gate,

Dielectric Isolation

2690µm x 5200µm (106mils x 205mils)

Thickness: 483µm ± 25.4µm (19mils ± 1mil)

Backside Finish:

Silicon

INTERFACE MATERIALS:

Glassivation:

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Type: PSG (Phosphorous Silicon Glass)

Unbiased (DI)

Thickness: 8.0kÅ ± 1.0kÅ

Top Metallization:

ADDITIONAL INFORMATION:

Worst Case Current Density:

Type: AlSiCu

Thickness: 16.0kÅ ± 2kÅ

<2.0 x 10 A/cm

Transistor Count:

196

Metallization Mask Layout

HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH

V-

V+

GND

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FN6411.2

December 12, 2012

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