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HS1-1825ARH PDF预览

HS1-1825ARH

更新时间： 2024-02-21 03:54:24
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
2页 38K
描述
Radiation Hardened High-Speed, Dual Output PWM

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HS1-1825ARH 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DIP
包装说明：DIP, DIP16,.3针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.27
其他特性：ALSO OPERATES IN CURRENT MODE模拟集成电路 - 其他类型：DUAL SWITCHING CONTROLLER
控制模式：VOLTAGE-MODE控制技术：PULSE WIDTH MODULATION
最大输入电压：30 V最小输入电压：12 V
JESD-30 代码：R-CDIP-T16JESD-609代码：e4
功能数量：1端子数量：16
最高工作温度：125 °C最低工作温度：-50 °C
最大输出电流：1 A封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DIP封装等效代码：DIP16,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
筛选级别：MIL-PRF-38535 Class V座面最大高度：5.08 mm
子类别：Switching Regulator or Controllers表面贴装：NO
切换器配置：BOOST最大切换频率：500 kHz
技术：BICMOS温度等级：AUTOMOTIVE
端子面层：Gold (Au)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED总剂量：300k Rad(Si) V
宽度：7.62 mm

HS1-1825ARH 数据手册

 浏览型号HS1-1825ARH的Datasheet PDF文件第2页 
HS-1825ARH  
Data Sheet  
January 2000  
File Number 4561.4  
Radiation Hardened High-Speed, Dual  
Output PWM  
Features  
• Electrically Screened to DESC SMD # 5962-99558  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
The Radiation Hardened HS-1825ARH Pulse Width  
Modulator is designed to be used in high frequency  
switched-mode power supplies and can be used in either  
current-mode or voltage-mode. It is well suited for single-  
ended boost converter applications.  
5
- Maximum Total Dose . . . . . . . . . . . . . 3 x 10 RAD(SI)  
- Vertical Architecture Provides Low Dose Rate Immunity  
- DI RSG Process Provides Latch-Up Immunity  
Device features include a precision voltage reference, low  
power start-up circuit, high frequency oscillator, wide-band  
error amplifier, and fast current-limit comparator. The use of  
proprietary process capabilities and unique design  
techniques results in fast propagation delay times and high  
output current over a wide range of output voltages.  
• Low Start-Up Current . . . . . . . . . . . . . . . . . . . 100µA (Typ)  
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . 80ns (Typ)  
• 12V to 20V Operation  
• 1A (Peak) Dual Output Drive Capability  
• 5.1V Reference  
Constructed with the Intersil Rad Hard Silicon Gate (RSG)  
Dielectric Isolation BiCMOS process, the HS-1825ARH has  
been specifically designed to provide highly reliable  
• Under-Voltage Lockout  
performance when exposed to harsh radiation environments.  
• Programmable Soft-Start  
• Switching Frequencies to 500kHz  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed below must be used when ordering.  
• Trimmed Oscillator Discharge Current  
• Latched Overcurrent Comparator with Full Cycle Restart  
• Programmable Leading Edge Blanking Circuit  
Detailed Electrical Specifications for the HS-1825ARH  
are contained in SMD 5962-99558. That document may  
be easily downloaded from our website.  
Applications  
www.intersil.com/spacedefense/space.asp  
• Current or Voltage Mode Switching Power Supplies  
• Motor Speed and Direction Control  
Ordering Information  
ORDERING  
NUMBER  
INTERSIL MKT.  
NUMBER  
TEMP. RANGE  
o
( C)  
Pinout  
5962F9955801VEC  
HS1-1825ARH-Q  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS-1825ARH  
SBDIP (CDIP2-T16) AND FLATPACK (CDFP4-F16)  
TOP VIEW  
5962F9955801QEC HS1-1825ARH-8  
5962F9955801VXC HS9-1825ARH-Q  
INV  
NON-INV  
E/A OUT  
CLOCK  
RT  
1
2
3
4
5
6
7
8
16 VREF 5.1V  
15 V  
5962F9955801QXC HS9-1825ARH-8  
HS1-1825ARH/Proto HS1-1825ARH/Proto  
HS9-1825ARH/Proto HS9-1825ARH/Proto  
CC  
14 OUTPUT B  
13 VC  
12 POWER GND  
11 OUTPUT A  
10 GND  
CT  
RAMP  
9
ILIM/SD  
SOFT START  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
1
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