Datasheet > HN2A01FUGRTE85N

HN2A01FUGRTE85N

更新时间： 2024-02-15 04:49:25

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器光电二极管晶体管
页数	文件大小	规格书
3页	241K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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HN2A01FUGRTE85N 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.84
最大集电极电流 (IC)：	0.15 A	基于收集器的最大容量：	7 pF
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	200	JESD-30 代码：	R-PDSO-G6
元件数量：	2	端子数量：	6
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	功耗环境最大值：	0.2 W
最大功率耗散 (Abs)：	0.2 W	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	80 MHz
VCEsat-Max：	0.3 V

HN2A01FUGRTE85N 数据手册

HN2A01FU

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

HN2A01FU

Unit: mm

Audio Frequency General Purpose Amplifier Applications

z Small package (dual type)

z High voltage and high current : V

= −50V, I = −150mA (max)

CEO

z High h

z Excellent h

: h

= 120 to 400

linearity

(I = −0.1mA) / (I = −2mA) = 0.95 (typ.)

C C

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Collector-base voltage

Symbol

Rating

−50

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

−5

−150

−30

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

125

JEDEC

―

stg

−55 to 125

JEITA

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

2-2J1B

Weight: 6.8 mg (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)

Test

Circuit

Characteristics

Symbol

Test Condition

= −50V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

−0.1

400

−0.3

―

μA

―

CBO

―

= −5V, I = 0

EBO

DC current gain

= −6V, I = −2mA

120

―

FE (Note)

Collector-emitter saturation voltage

Transition frequency

= −100mA, I = −10mA

−0.1

―

CE (sat)

= −10V, I = −1mA

―

Collector output capacitance

= −10V, I = 0, f = 1MH

Note: h classification

Y(Y): 120 to 240, GR(G): 200 to 400

( ) marking symbol

Marking

Equivalent Circuit (top view)

Start of commercial production

1992-01

2014-03-01

12 3

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