Datasheet > HMS45N15D

HMS45N15D

更新时间： 2025-08-04 18:26:31

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
6页	693K
描述
低压MOS

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中文翻译

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HMS45N15D 数据手册

HMS45N15D

N-Channel Super Trench Power MOSFET

Description

The HMS45N15D uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

● V_DS=150V,I_D=45A

R_DS(ON)=24mΩ (typical) @ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Marking and pin assignment

Application

● LED backlighting

● Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

HMS45N15D

DFN5X6-8L

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V_GS

±20

I_D

I_D(100℃)

I_DM

31.8

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

180

Maximum Power Dissipation

P_D

130

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.87

W/℃

℃

E_AS

200

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 175

Thermal Characteristic

Thermal Résistance, Junction-to-Case^{(Note 2)}

R_θJC

1.15

℃/W

12 3 4 5 6

中文翻译

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