Datasheet > HMS4M16M16G-15

HMS4M16M16G-15

更新时间： 2024-01-04 00:04:08

品牌	Logo	应用领域
HANBIT		静态存储器
页数	文件大小	规格书
10页	246K
描述
SRAM MODULE 8Mbyte(4M x 16-Bit)

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HMS4M16M16G-15 数据手册

HANBit

HMS4M16M16G

H A N

SRAM MODULE 8Mbyte(4M x 16-Bit)

B I T

HMS4M16M16G

Part No.

GENERAL DESCRIPTION

The HMS4M16M16G is a high-speed static random access memory (SRAM) module containing 2,097,152

words organized in 4M x16-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-

pin, double-sided, FR4-printed circuit board.

Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently.

Output enable (/OE) and write enable (/WE) can set the memory input and output.

Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.

Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be

powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.

PIN ASSIGNMENT

FEATURES

Access times : 10, 12, 15, 17 and 20ns

High-density 8MByte design

High-reliability, high-speed design

Single + 5V ±10% power supply

Easy memory expansion /CE and /OE functions

All inputs and outputs are TTL-compatible

Industry-standard pinout

Vcc

Vss

DQ0

DQ1

DQ2

DQ3

Vcc

DQ8

11 DQ9

13 DQ10

15 DQ11

17 A0

19 A1

21 A2

23 DQ12

25 DQ13

27 DQ14

29 DQ15

31 Vss

33 A15

35 / CE2

37 / CE4

39 A17

41 / OE

43 NC

45 NC

47 NC

49 NC

51 A3

53 A4

55 A5

57 Vcc

59 A6

61 NC

DQ4

DQ5

DQ6

DQ7

/ WE

A14

/ CE1

/ CE3

A16

Vss

A10

A11

A12

A13

FR4-PCB design

Low profile 72-pin

Part identification

- HMS2M16M8G : SIMM design,Gold

OPTIONS

Timing

MARKING

10ns access

12ns access

15ns access

17ns access

20ns access

Packages

-10

-12

-15

-17

-20

Vss

A19

A20

63 NC

65 NC

67 NC

69 A18

72-pin SIMM

SIMM/ZIP

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