Datasheet > HMS24N50T

HMS24N50T

更新时间： 2022-02-26 11:32:59

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
9页	1322K
描述
500V N-Channel MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMS24N50T 数据手册

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

VGS = 0V,ID = 250uA, TJ=25℃

VGS = 0V,ID = 250uA, TJ=150℃

500

BVDSS

Drain-Source Breakdown Voltage

550

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

coefficient

ID = 250uA, referenced to 25°C

0.6

V/°C

VDS =500V, VGS = 0V

VDS = 400V, TC = 125 °C

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

IDSS

IGSS

Drain-Source Leakage Current

Gate-Source Leakage, Forward

Gate-source Leakage, Reverse

100

-100

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS =10 V, ID = 12.5A

2.5

4.5

Static Drain-Source On-state

Resistance

RDS(ON)

0.12

0.14

Ω

Dynamic Characteristics

Ciss

Coss

Crss

1440

370

Input Capacitance

VGS =0 V, VDS =25V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Dynamic Characteristics

td(on)

Turn-on Delay Time

Rise Time

110

VDD =400V, ID =12A, RG =20Ω

td(off)

Turn-off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge(Miller Charge)

7.8

Qgs

Qgd

VDS =400V, VGS =10V, ID =12A

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

1.5

Unit.

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

ISM

VSD

trr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

IS =12A, VGS =0V

475

5.8

IS =12A, VGS=0V, dIF/dt=100A/us

Qrr

NOTES

1. Repeativity rating : pulse width limited by junction temperature

2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ID, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

123 4 5 6 7...9

下载PDF

与HMS24N50T相关器件

型号	品牌	描述	获取价格	数据表
HMS25632J2	HANBIT	SRAM MODULE 1Mbyte (256K x 32-Bit), 5V, 68-Pin JLCC Design	获取价格
HMS25632J2-10	HANBIT	SRAM MODULE 1Mbyte (256K x 32-Bit), 5V, 68-Pin JLCC Design	获取价格
HMS25632J2-12	HANBIT	SRAM MODULE 1Mbyte (256K x 32-Bit), 5V, 68-Pin JLCC Design	获取价格
HMS25632J2-15	HANBIT	SRAM MODULE 1Mbyte (256K x 32-Bit), 5V, 68-Pin JLCC Design	获取价格
HMS25632J2-55	HANBIT	SRAM MODULE 1Mbyte (256K x 32-Bit), 5V, 68-Pin JLCC Design	获取价格
HMS25632J2V	HANBIT	SRAM MODULE 1Mbyte (256K x 32-Bit) 3.3V, 68-Pin JLCC Packaging	获取价格