Datasheet > HMF1M32F8

HMF1M32F8

更新时间： 2022-12-18 01:05:14

品牌	Logo	应用领域
HANBIT		闪存
页数	文件大小	规格书
11页	423K
描述
Flash-ROM Module 4MByte (1Mx32Bit), 100Pin-MMC, 5.5V Design

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HMF1M32F8 数据手册

HANBit

HMF1M32F8

TRUTH TABLE

MODE

/OE

/CE

/WE

HIGH-Z

POWER

STANDBY

ACTIVE

STANDBY

NOT SELECTED

READ

WRITE or ERASE

NOTE: X means don’t care

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Voltage with respect to ground all other pins

Voltage with respect to ground Vcc

Power Dissipation

SYMBOL

RATING

V_IN,OUT

V_CC

-2.0V to +7.0V

o o

-65 C to +125 C

Storage Temperature

T_STG

o o

-55 C to +125 C

Operating Temperature

T_A

w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the

device.

This is a stress rating only and functional operation of the deviceat these or any other conditions above those

indicated

in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for

extended

periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

MIN

TYP.

MAX

PARAMETER

Vcc for ±5% device Supply Voltages

Vcc for ± 10% device Supply Voltages

Ground

V_CC

Vcc

V_SS

4.75V

4.5V

5.25V

5.5V

DC AND OPERATING CHARACTERISTICS _{(0 C £ T}

£ 70 C ; Vcc = 5V ± 0.5V )

TEST CONDITIONS

PARAMETER

SYMBOL

MIN

MAX

UNITS

Input Load Current

Vcc=Vcc max, V_IN= VSS to Vcc

Vcc=Vcc max, VOUT= VSS to Vcc

I_OH= -2.5mA, Vcc = Vcc min

I_OL= 12mA, Vcc =Vcc min

/CE = V_IL, /OE=V_IH,

I_L1

I_L0

±1.0

Output Leakage Current

Output High Voltage

Output Low Voltage

V_OH

V_OL

I_CC1

2.4

0.45

Vcc Active Current for Read(1)

Vcc Active Current for Program

or Erase(2)

/CE = V_IL, /OE=V_IH

/CE= V_IH

I_CC2

Vcc Standby Current

I_CC3

1.0

4.2

Low Vcc Lock-Out Voltage

V_LKO

3.2

URL: www.hbe.co.kr

REV.02 (August,2002)

HANBit Electronics Co., Ltd.

1 234 5 6 7...11

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