Datasheet > HMF1M32F2VA

HMF1M32F2VA

更新时间： 2022-03-04 14:21:05

品牌	Logo	应用领域
HANBIT		闪存
页数	文件大小	规格书
12页	426K
描述
Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-SMM, 3.3V Design

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HMF1M32F2VA 数据手册

HANBit

HMF1M32F2VA

ERASE AND PROGRAMMING PERFORMANCE

LIMITS

PARAMETER

UNIT

COMMENTS

MIN.

TYP.

0.7

MAX.

Sector Erase Time

Chip Erase Time

sec

Excludes 00H programming

prior to erasure

Byte Programming Time

Chip Programming Time

300

Excludes system-level

overhead

sec

TSOP CAPACITANCE

PARAMETER

SYMBOL

PARAMETER

DESCRIPTION

TEST SETUP

MIN

MAX

UNIT

C_IN

C_OUT

C_IN2

Input Capacitance

V_IN= 0

V_OUT= 0

V_IN= 0

7.5

Output Capacitance

8.5

7.5

Control Pin Capacitance

: Test conditions T_A= 25^oC, f=1.0 MHz.

Notes

TEST SPECIFICATIONS

TEST CONDITION

70R, 80

90, 120

UNIT

Output load

1TTL gate

Output load capacitance,C_L(Including jig capacitance)

Input rise and full times

100

0.0-3.0

1.5

Input pulse levels

Input timing measurement reference levels

Output timing measurement reference levels

1.5

AC CHARACTERISTICS

Read Only Operations Characteristics

PARAMETER

SYMBOLS

Speed Options

DESCRIPTION

TEST SETUP

UNIT

-70R

-80

JEDEC STANDARD

-90

-120

t_AVAV

t_AVQV

t_ELQV

t_GLQV

t_EHQZ

t_GHQZ

t_AXQX

t_RC

t_ACC

t_CE

t_OE

t_DF

Read Cycle Time

Min

120

/CE = V_IL

/OE = V_IL

Max

Address to Output Delay

Chip Enable to Output Delay

Chip Enable to Output High-Z

/OE = V_IL

Max

Min

t_DF

Output Enable to Output High-Z

Output Hold Time From Addresses,

/CE or /OE, Whichever Occurs First

t_QH

URL: www.hbe.co.kr

REV.02(August,2002)

HANBit Electronics Co., Ltd.

1 2 345 6 7...12

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