HANBit
HMF1M32F8
Flash-ROM Module 4MByte (1Mx32Bit), 100Pin-MMC, 5.5V Design
Part No. HMF1M32F8
GENERAL DESCRIPTION
The HMF1M32F8 is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a
x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 100-pin stackable type, double -sided, FR4-
printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2 , /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and
output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL -
compatible.
PIN ASSIGNMENT
FEATURES
w Access time: 55, 70, 90, 120ns
w High-density 4MByte design
w High-reliability, low-power design
P1
PIN Symbol PIN Symbol
P2
PIN
Symbol
PIN
Symbol
1
Vcc
NC
26
27
Vcc
51
52
Vcc
NC
76
77
Vcc
/CE_UM2
/CE_UU2
DQ22
DQ21
DQ20
DQ19
Vss
2
/CE_LL2
w Single + 5V 0.5V power supply
±
3
/CE_LL1
28 /CE_LM2 53 /CE_UM1 78
w Easy memory expansion
4
/CE_LM1 29
A18
A17
A16
A15
Vss
A14
A13
DQ9
DQ7
Vss
DQ5
A12
A11
A10
Vss
A9
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
/CE_UU1
DQ31
DQ30
DQ29
Vss
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
w All in/outputs are TTL-compatible
w FR4-PCB design
5
DQ15
DQ14
DQ13
Vss
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
6
7
w 100-pin Designed by
8
50-pin Fine Pitch Connector
w Minimum 1,000,000 write/erase cycle
w Sector erases architecture
w Sector group protection
9
DQ12
DQ11
DQ10
DQ8
Vss
/OE
DQ18
DQ17
DQ16
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
/WE
NC
NC
Vss
Vss
w Temporary sector group unprotection
DQ6
DQ4
DQ3
DQ2
Vss
NC
NC
NC
NC
OPTIONS
w Timing
MARKING
DQ28
DQ27
Vss
NC
NC
Vss
55ns access
70ns access
90ns access
120ns access
w Packages
100-pin SMM
-55
-70
DQ1
DQ0
A0
DQ26
DQ25
DQ24
DQ23
Vss
NC
A8
NC
-90
A7
NC
-120
A1
A6
NC
A2
A5
Vss
A3
A4
NC
NC
F
Vcc
Vcc
Vcc
Vcc
1
URL: www.hbe.co.kr
REV.02 (August,2002)
HANBit Electronics Co., Ltd.