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HMC677G32TR PDF预览

HMC677G32TR

更新时间: 2024-01-14 09:16:07
品牌 Logo 应用领域
亚德诺 - ADI 信息通信管理接口集成电路
页数 文件大小 规格书
8页 800K
描述
SPECIALTY INTERFACE CIRCUIT, PQFP32, SMT-32

HMC677G32TR 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:QFP,Reach Compliance Code:unknown
风险等级:5.84接口集成电路类型:INTERFACE CIRCUIT
JESD-30 代码:S-PQFP-G32长度:10.3 mm
标称负供电电压:-5 V功能数量:1
端子数量:32最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装形状:SQUARE
封装形式:FLATPACK座面最大高度:1.96 mm
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
技术:BICMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.76 mm
端子位置:QUAD宽度:10.3 mm

HMC677G32TR 数据手册

 浏览型号HMC677G32TR的Datasheet PDF文件第2页浏览型号HMC677G32TR的Datasheet PDF文件第3页浏览型号HMC677G32TR的Datasheet PDF文件第4页浏览型号HMC677G32TR的Datasheet PDF文件第5页浏览型号HMC677G32TR的Datasheet PDF文件第6页浏览型号HMC677G32TR的Datasheet PDF文件第7页 
HMC677G32  
v00.0510  
6-Bit SERIAL/PARALLEL SWITCH  
DRIVER/CONTROLLER  
Typical Applications  
Features  
The HMC677G32 is ideal for:  
Accepts Serial or Parallel Data  
Compatible with TTL and CMOS Logic  
Complementary Outputs  
6-Bit Control Word  
• Microwave and Millimeterwave Control Circuits  
• Test and Measurement Equipment  
• Complex Multi-Function Assemblies  
• Military and Space Subsystems  
Power-up State Selection  
Low Power Consumption  
Fast Clock Rate  
• Transmit/Receive Module Controllers  
5
Functional Diagram  
General Description  
The HMC677G32 is a multi-function BiCMOS control  
interface IC which is ideal for driving the gates of FET  
and pHEMT based MMIC control devices. This unique  
IC can be used to simplify the control of microwave  
and millimeterwave transmit/receive modules, mili-  
tary subsystems, and multi-throw/multi-port test  
and measurement equipment. The HMC677G32  
accepts serial or parallel data, and can drive up to 6  
complementary sets of outputs.  
The HMC677G32 also provides additional functionality  
such as a power-up state selection, adjustable  
output voltage levels, and a latched parallel control  
mode which allows multiple control devices to share  
a common data bus. The HMC677G32 is ideal for  
controlling digital phase shifters, digital attenuators,  
digital variable gain amplifiers, and switching matrices  
embedded in complex microwave and millimeterwave  
assemblies.  
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +5V, Vee = -5V, Voph = 0V  
Parameter  
Min  
2
Typ  
Max  
Units  
V
Input High Voltage, Vih  
Low Voltage, Vil  
0.8  
V
Output High Voltage, Voh (Ioh = 1 mA, Vee = -4.5V)  
Output Low Voltage, Vol (Iol = 2 mA, Vee = -4.5V)  
Maximum Input Leakage Current, Iin  
Propagation Delay, tplh  
Voph - 0.1  
V
Vee + 0.1  
V
1
µA  
nS  
Mbps  
ns  
80  
Maximum Serial Bit Rate  
10  
Maximum I/O Update Rate (with 10 pF capacitive load at each output pin)  
100  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
5 - 1  

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