Datasheet > HMC424A-Die

HMC424A-Die

更新时间： 2023-12-20 18:46:20

品牌	Logo	应用领域
亚德诺 - ADI		衰减器
页数	文件大小	规格书
11页	278K
描述
0.5 dB LSB GaAs MMIC 6位数字衰减器，DC - 13 GHz

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HMC424A-Die 数据手册

HMC424ACHIPS

Data Sheet

APPLICATIONS INFORMATION

(4 mil) thick die to a 0.150 mm (6 mil) thick molybdenum heat

spreader (moly tab), which is then attached to the ground plane

(see Figure 25).

MOUNTING AND BONDING TECHNIQUES

The HMC424ACHIPS is back metallized and must be attached

directly to the ground plane with gold tin (AuSn) eutectic

preforms or with electrically conductive epoxy.

0.102mm (0.004") THICK GaAs MMIC

RIBBON BOND

0.076mm

(0.003")

The die thickness is 0.102 mm (4 mil). The 50 Ω microstrip

transmission lines on 0.127 mm (5 mil) thick alumina thin film

substrates are recommended for bringing RF to and from the

HMC424ACHIPS (see Figure 24).

0.102mm (0.004") THICK GaAs MMIC

RF GROUND PLANE

0.150mm

RIBBON BOND

0.254mm (0.010") THICK ALUMINA

THIN FILM SUBSTRATE

(0.006”) THICK

MOLY TAB

0.076mm

(0.003")

Figure 25. Bonding RF Pads to 10 mil Substrate

Microstrip substrates are placed as close to the

RF GROUND PLANE

HMC424ACHIPS as possible to minimize bond length. Typical

die to substrate spacing is 0.076 mm (3 mil).

0.127mm (0.005") THICK ALUMINA

THIN FILM SUBSTRATE

RF bonds made with 3 mil × 5 mil ribbon are recommended.

DC bonds made with 1 mil diameter wire are recommended.

All bonds must be as short as possible.

Figure 24. Bonding RF Pads to 5 mil Substrate

When using 0.254 mm (10 mil) thick alumina thin film substrates,

the HMC424ACHIPS must be raised 0.150 mm (6 mil) so that the

surface of the HMC424ACHIPS is coplanar with the surface of the

substrate. One way to accomplish this is by attaching the 0.102 mm

ASSEMBLY DIAGRAM

An assembly diagram of the HMC424ACHIPS is shown in

Figure 26.

3mm

NOMINAL

GAP

50Ω

TRANSMISSION

TO –5V SUPPLY

LINE

RF AND DC BONDS

1mm GOLD WIRE

Figure 26. Assembly Diagram

Rev. B | Page 10 of 11

1...7 8 91011

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