Datasheet > HMC414MS8G_01

HMC414MS8G_01

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
8页	322K
描述
GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz

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HMC414MS8G_01 数据手册

HMC414MS8G

v01.1201

MICROWAVE CORPORATION

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 2.2 - 2.8 GHz

Absolute Maximum Ratings

Supply Voltage (Vcc)

Control Voltage (Vpd)

Input Power (RFin)

+5.5 Vdc

+4.0 Vdc

+20 dBm

150 °C

Channel Temperature (Tc)

Continuous Pdiss (T= 85 °C)

(derate 27 mW/°C above 85 °C)

1.73 W

Storage Temperature

Operating Temperature

-65 to +150° C

-40 to +85° C

Pin Locations & Outline Drawing

1. MATERIAL:

4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH

USING WHITE INK, LOCATED APPROX AS SHOWN

A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED

PLASTIC, SILICA & SILICONE INPREGNATED.

B. LEADFRAME MATERIAL: COPPER ALLOY

5. DIMENSION DOES NOT INCLUDE MOLDFLASH

OF 0.15mm PER SIDE.

2. PLATING: LEAD-TIN SOLDER PLATE

6. DIMENSION DOES NOT INCLUDE MOLDFLASH

OF 0.25mm PER SIDE.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Visit us at www.hittite.com, or Email at sales@hittite.com

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