Datasheet > HMC341LC3B_09

HMC341LC3B_09

更新时间： 2022-11-07 16:21:23

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	201K
描述
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz

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HMC341LC3B_09 数据手册

HMC341LC3B

v02.1208

SMT GaAs PHEMT MMIC

LOW NOISE AMPLIFIER, 21 - 29 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+5.5 Vdc

Vdd (Vdc)

Idd (mA)

RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm

+2.7

Channel Temperature

175 °C

+3.0

Continuous Pdiss (T= 85 °C)

(derate 5.43 mW/°C above 85 °C)

+4.0

0.489 W

+5.0

Thermal Resistance

(channel to ground paddle)

Note: Ampliﬁer will operate over full voltage ranges shown above.

184 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA.

2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL.

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.

7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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