HMC342
v01.0907
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
1
Typical Applications
The HMC342 is ideal for:
Features
Noise Figure : 3.5 dB
• Microwave Point-to-Point Radios
• Millimeterwave Point-to-Point Radios
• VSAT & SATCOM
Gain: 20 dB
Single Supply : +3V @ 41mA
Small Size: 1.06 x 2.02 mm
Functional Diagram
General Description
The HMC342 chip is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be integrated
into Multi-Chip Modules (MCMs) due to its small
(2.14 mm2) size. The chip utilizes a GaAs PHEMT
process offering 20 dB gain from a single bias
supply of +3V @ 41mA with a noise figure of 3.5 dB.
All data is with the chip in a 50 ohm test fixture con-
nected via 0.025 mm (1 mil) diameter wire bonds of
minimal length 0.31 mm (<12 mils).
Electrical Specifications, TA = +25° C, Vdd = +3V
Parameter
Frequency Range
Min.
16
Typ.
13 - 25
21
Max.
Units
GHz
dB
Gain
26
.04
4.5
Gain Variation Over Temperature
Noise Figure
.03
3.5
13
dB/°C
dB
Input Return Loss
6
6
dB
Output Return Loss
14
dB
Reverse Isolation
39
1
45
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
5
dBm
dBm
dBm
mA
3
8
8
13
41
55
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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