Datasheet > HMC318MS8G_07

HMC318MS8G_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	243K
描述
GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz

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HMC318MS8G_07 数据手册

HMC318MS8G / 318MS8GE

v02.0607

GaAs MMIC LOW NOISE AMPLIFIER

with AGC, 5.0 - 6.0 GHz

Input Return Loss over Control Range

Gain vs. Control Voltage @ 5.8 GHz

-5

-10

-2

-4

Vctl= 3.0V

Vctl= 1.8V

Vctl= 1.4V

Vctl= 0.8V

Vctl= 0V

-6

-15

-20

-8

-10

-12

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

4.5

5.5

FREQUENCY (GHz)

6.5

Control Voltage (Vdc)

Reverse Isolation vs.

Temperature, Vctl = 0V

Output Return Loss over Control Range

+25C

+85C

-40C

Vctl= 3.0V

Vctl= 1.8V

-10

-20

-30

-40

-50

-5

Vctl= 1.4V

Vctl= 0.8V

Vctl= 0V

-10

-15

-20

4.5

5.5

6.5

4.5

5.5

FREQUENCY (GHz)

6.5

FREQUENCY (GHz)

Noise Figure and

OIP3 vs. Control Voltage

Frequency = 5.8 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+7.0 Vdc

VCTL

Noise Figure (dB)

OIP3 (dBm)*

Control Voltage Range (Vctl)

RF Input Power (RFin)(Vdd = +3.0 Vdc)

Channel Temperature

-0.2 to Vdd

0 dBm

2.5

4.5

13.0

1.2

1.4V

3.0V

150 °C

10.5

-6.7

Continuous Pdiss (T = 85 °C)

(derate 9.76 mW/°C above 85 °C)

0.634 W

*Two-tone input power = -20 dBm per tone.

Thermal Resistance

(channel to ground paddle)

102 °C/W

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

-65 to +150 °C

-40 to +85 °C

Class 1A

Gain Control

Typical

Ictl (uA)

Vctl (Vdc)

Gain State

Maximum

Minimum

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Vdd

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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