HMC279MS8G
v02.0701
GaAs MMIC DRIVER AMPLIFIER
2.5 - 4.2 GHz
8
Typical Applications
Features
The HMC279MS8G is ideal for:
• 2.6 - 2.7 GHz MMDS
High Gain: 36 dB
Psat Output Power: +14 dBm
Single Supply: +3V @ 60 mA
Ultra Small Package: MSOP8G
No External Matching Required
• 3.5 GHz Wireless Local Loop
• 3.7 - 4.2 GHz Satellite
(Receive and Transmit Bands)
Functional Diagram
General Description
The HMC279MS8G is a +3V GaAs MMIC driver
amplifier covering the 2.5 - 4.2 GHz frequency range.
The device is packaged in a low cost, surface mount
MSOP plastic package with an exposed base paddle
for improved RF ground. The amplifier provides
greater than 36dB gain and +14 dBm P1dB while
operating from a single +3V supply at only 60mA. No
external components are required and the amplifier
occupies less than 0.023 sq. in. (14.6 sq. mm). All
data is taken with the amplifier assembled into a 50
ohm test fixture with the exposed ground paddle con-
nected to RF ground.
Electrical Specifications, TA = +25° C, Vdd= +3V
Parameter
Min.
Typ.
2.5 - 3.7
36
Max.
Min.
35
Typ.
3.7 - 4.2
38
Max.
Units
GHz
dB
Frequency Range
Gain
33
40
41
Gain Variation over Temperature
Input Return Loss
0.03
10
0.045
0.03
11
0.045
dB/°C
dB
5
5
6
8
Output Return Loss
9
13
dB
Reverse Isolation
44
8
52
42
9
48
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
12
12
dBm
dBm
dBm
dB
11
17
14
11
15
14
22
20
5
8
5
8
Supply Current (Idd)
60
60
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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