Description
SK hynix Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outine Double Data Rate Syn-
chronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules
that use DDR4 SDRAM devices. These DDR4 SDRAM Unbuffered Small Outline DIMMs are intended for use
as main memory when installed in systems such as micro servers and mobile personal computres.
Features
• Power Supply: VDD=1.2V (1.14V to 1.26V)
• VDDQ = 1.2V (1.14V to 1.26V)
• VPP - 2.5V (2.375V to 2.75V)
• VDDSPD=2.25V to 3.6V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif-
ferent bank group accesses are available
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD for ECC SODIMM
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
Ordering Information
# of
ranks
Part Number
Density
Organization
Component Composition
HMA851S6CJR6N- UH/VK/WM/XN
HMA81GS6CJR8N-UH/VK/WM/XN
HMA81GS7CJR8N-UH/VK/WM/XN
HMA82GS6CJR8N-UH/VK/WM/XN
HMA82GS7CJR8N-UH/VK/WM/XN
4GB
8GB
512Mx64
1Gx64
1Gx72
2Gx64
2Gx72
512Mx16(H5AN8G6NCJR)*4
1Gx8(H5AN8G8NCJR)*8
1Gx8(H5AN8G8NCJR)*9
1Gx8(H5AN8G8NCJR)*16
1Gx8(H5AN8G8NCJR)*18
1
1
1
2
2
8GB
16GB
16GB
Rev. 1.6 / Jan.2020
3