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HMA81GS7CJR8N-UH PDF预览

HMA81GS7CJR8N-UH

更新时间: 2022-05-14 22:17:56
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器双倍数据速率
页数 文件大小 规格书
77页 1670K
描述
DDR4 SDRAM SO-DIMM Based on 8Gb C-die

HMA81GS7CJR8N-UH 数据手册

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Symbol  
Type  
Function  
Address Inputs: Provide the row address for ACTIVATE Commands and the column  
address for Read/Write commands to select one location out of the memory array in the  
A0 - A16  
Input respective bank. A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, and WE_n/A14 have  
additional functions. See other rows. The address inputs also provide the op-code during  
Mode Register Set commands.  
Auto-precharge: A10 is sampled during Read/Write commands to determine whether  
Autoprecharge should be performed to the accessed bank after the Read/Write  
operation. (HIGH: Autoprecharge; LOW: no Autoprecharge). A10 is sampled during a  
Precharge command to determine whether the Precharge applies to one bank (A10  
A10 / AP  
Input  
LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected  
by bank addresses.  
Burst Chop: A12/BC_n is sampled during Read and Write commands to determine if  
Input burst chop (on-the-fly) will be performed. (HIGH, no burst chop; LOW: burst chopped).  
See command truth table for details.  
A12 / BC_n  
RESET_n  
CMOS Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive  
Input when RESET_n is HIGH. RESET_n must be HIGH during normal operation.  
Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then  
Input/ CRC code is added at the end of Data Burst. Any DQ from DQ0-DQ3 may indicate the  
Output internal Vref level during test via Mode Register Setting MR4 A4=High. Refer to vendor  
specific data sheets to determine which DQ is used.  
DQ  
Data Strobe: output with read data, input with write data. Edge-aligned with read data,  
centered in write data. DDR4 SDRAMs support differential data strobe only and does not  
support single-ended.  
Input/  
Output  
DQS_t, DQS_c,  
Command and Address Parity Input : DDR4 Supports Even Parity check in DRAMs with  
MR setting. Once it’s enabled via Register in MR5, then DSRAM calculates Parity with  
Input ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, BG0-BG1, BA0-BA1, A16-A0. Input parity  
should be maintained at the rising edge of the clock and at the same time with  
command & address with CS_n LOW.  
PARITY  
ALERT: It has multiple functions, such as CRC error flag or Command and Address Parity  
error flag, as an Output signal. If there is an error in CRC, then ALERT_n goes LOW for  
the period time interval and goes back HIGH. If there is an error in Command Address  
Output Parity Check, then ALERT_n goes LOW for relatively long period until on going DRAM  
internal recovery transaction is complete.  
ALERT_n  
During Connectivity Test mode, this pin functions as an input.  
Use of this signal or not is dependent on the system.  
SA0-SA1  
RFU  
Input Device address for the SPD.  
Reserved for Future Use. No on DIMM electrical connection is present.  
No Connect: No on DIMM electrical connection is present.  
NC  
VDD1  
Supply  
Supply  
Supply  
Power Supply: 1.2 V +/- 0.06 V  
Ground  
VSS  
VTT2  
Power Supply : 0.6V  
Rev. 1.6 / Jan.2020  
7

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