是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Contact Manufacturer | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.83 | 外壳连接: | ISOLATED |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 200 V/us |
最大直流栅极触发电流: | 40 mA | 最大直流栅极触发电压: | 2 V |
最大维持电流: | 100 mA | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
最大漏电流: | 0.5 mA | 通态非重复峰值电流: | 400 A |
元件数量: | 1 | 端子数量: | 3 |
最大通态电流: | 40000 A | 最高工作温度: | 110 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 40 A | 重复峰值关态漏电流最大值: | 500 µA |
断态重复峰值电压: | 600 V | 重复峰值反向电压: | 600 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HIS665 | HUTSON |
获取价格 |
Silicon Controlled Rectifier, TO-218 | |
HISO | ETC |
获取价格 |
HISO | |
HISP10-1X02G | AUK |
获取价格 |
IC Socket, SIP2, 2 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X03G | AUK |
获取价格 |
IC Socket, SIP3, 3 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X04G | AUK |
获取价格 |
IC Socket, SIP4, 4 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X05G | AUK |
获取价格 |
IC Socket, SIP5, 5 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X06G | AUK |
获取价格 |
IC Socket, SIP6, 6 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X07G | AUK |
获取价格 |
IC Socket, SIP7, 7 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X08G | AUK |
获取价格 |
IC Socket, SIP8, 8 Contact(s), 1.778mm Term Pitch, Solder | |
HISP10-1X09G | AUK |
获取价格 |
IC Socket, SIP9, 9 Contact(s), 1.778mm Term Pitch, Solder |