Datasheet > HFH7N80

HFH7N80

更新时间： 2022-12-16 17:08:58

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SEMIHOW		/
页数	文件大小	规格书
8页	1172K
描述
800V N-Channel MOSFET

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HFH7N80 数据手册

Typical Characteristics (continued)

1.2

1.1

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

※ Notes :

1. V_GS= 0 V

2. I_D= 250 μ A

0.9

※ Notes :

1. V_GS= 10 V

2. I_D= 3.0 A

0.8

-100

-50

100

150

200

-100

-50

100

150

200

T_J, Junction Temperature [^oC]

Figure 8. On-Resistance Variation

vs Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

10²

10¹

10⁰

Operation in This Area

is Limited by R _DS(on)

100 µs

1 ms

10 ms

-1

* Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-2

10⁰

10¹

10²

10³

100

125

150

T_C, Case Temperature [ ℃]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

10⁰

D=0.5

0.2

* Notes :

1. Z_θJC(t) = 0.63 ^oC/W Max.

2. Duty Factor, D=t₁/t₂

3. T_JM- T_C= P_DM* Z_θJC(t)

-1

0.1

0.05

P_DM

0.02

0.01

-2

single pulse

t₁

t₂

-5

-4

-3

-2

-1

10⁰

10¹

t₁, Square Wave Pulse Duration [sec]

Figure 11. Transient Thermal Response Curve

◎ SEMIHOW REV.A0,Mar 2010

1 2 3 456 7 8

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