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HFBR-2414T PDF预览

HFBR-2414T

更新时间: 2024-01-10 06:14:06
品牌 Logo 应用领域
惠普 - HP 光纤放大器通信
页数 文件大小 规格书
25页 286K
描述
Components is Designed to Provide cost effective, High performance fiber optic communication links

HFBR-2414T 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.25Is Samacsys:N
内置特性:AMPLIFIER数据速率:35 Mbps
发射极/检测器类型:PIN PHOTODIODE光纤设备类型:RECEIVER
光纤类型:50/125, 62.5/125, 100/140安装特点:THROUGH HOLE MOUNT
最高工作温度:85 °C最低工作温度:-40 °C
标称工作波长:820 nm接收类型:ANALOG
子类别:Fiber Optic Receivers最大供电电压:5.25 V
最小供电电压:4.75 V标称供电电压:5 V
表面贴装:NOBase Number Matches:1

HFBR-2414T 数据手册

 浏览型号HFBR-2414T的Datasheet PDF文件第19页浏览型号HFBR-2414T的Datasheet PDF文件第20页浏览型号HFBR-2414T的Datasheet PDF文件第21页浏览型号HFBR-2414T的Datasheet PDF文件第22页浏览型号HFBR-2414T的Datasheet PDF文件第24页浏览型号HFBR-2414T的Datasheet PDF文件第25页 
Absolute Maximum Ratings  
Parameter  
Symbol  
Min  
-55  
Max  
+85  
Units  
°C  
Reference  
Storage Temperature  
TS  
TA  
Operating  
-40  
+85  
°C  
Temperature  
Lead Soldering Cycle  
Note 1  
Temp  
Time  
+260  
10  
°C  
sec  
Supply Voltage  
Output Current  
Signal Pin Voltage  
VCC  
IO  
-0.5  
-0.5  
6.0  
25  
V
mA  
V
VSIG  
VCC  
Electrical/Optical Characteristics -40 °C to +85 °C; 4.75 V Supply Voltage 5.25 V,  
= 511 W, Fiber sizes with core diameter 100 mm, and N.A. -0.35 unless otherwise specified.  
R
LOAD  
Parameter  
Symbol Min  
Typ2  
Max  
Units  
Conditions  
Reference  
Responsivity  
RP  
5.3  
4.5  
7
9.6  
mV/µW  
TA = +25 °C @ 820 Note 3, 4  
nm, 50 MHz  
Figure 18  
11.5  
0.59  
mV/µW  
mV  
@ 820 nm, 50 MHz  
RMS Output Noise Voltage  
VNO  
0.40  
Bandwidth filtered  
@ 75 MHz  
Note 5  
PR = 0 µW  
0.70  
mV  
Unfiltered  
Figure 15  
bandwidth  
PR = 0 µW  
Equivalent Input Optical Noise Power  
(RMS)  
PN  
PR  
-43.0  
0.050  
-41.4  
0.065  
dBm  
µW  
Bandwidth Filtered  
@ 75MHz  
Optical Input Power (Overdrive)  
-7.6  
175  
dBm pk  
µW pk  
TA = +25 °C  
Note 6  
Figure 16  
-8.2  
150  
dBm pk  
µW pk  
W
Output Impedance  
ZO  
30  
Test Frequency =  
50 MHz  
dc Output Voltage  
Power Supply Current  
Equivalent NA  
VO dc  
IEE  
-4.2  
-3.1  
9
-2.4  
15  
V
PR = 0 µW  
mA  
RLOAD = 510 W  
NA  
D
0.35  
324  
Equivalent Diameter  
µm  
Note 7  
CAUTION: The small junction sizes inherent to the design of these components increase the components’ susceptibility to damage  
from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of these  
components to prevent damage and/or degradation which may be induced by ESD.  
23  

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