Datasheet > HFA50F20

HFA50F20

更新时间： 2024-09-29 23:55:43

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HFA50F20 数据手册

PD - 20506

HFA50HF20

Ultrafast, Soft Recovery Diode

HEXFRED^TM

CATHODE

V_R= 200V

V_F= 0.96V

Features

• Reduced RFI and EMI

• Reduced Snubbing

• Extensive Characterization of Recovery Parameters

• Hermetic

Q_rr= 390nC

• Surface Mount

di_(rec)M/dt = 900A/µs

ANODE

Description

HEXFRED^TMdiodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems.

An extensive characterization of the recovery behavior

for different values of current, temperature and di/dt

simplifies the calculations of losses in the operating

conditions. The softness of the recovery eliminates the

need for a snubber in most applications. These devices

are ideally suited for power converters, motors drives and

other applications where switching losses are significant

portion of the total losses.

SMD -1

Absolute Maximum Ratings (per Leg)

Parameter

D.C. Reverse Voltage

Max.

200

Units

V_R

I_F@ T_C= 100°C

Continuous Forward Current

100

I_FSM@ T_C= 25°C Single Pulse Forward Current

600

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

125

T_J

-55 to +150

°C

T_STG

Storage Temperature Range

Thermal - Mechanical Characteristics

Parameter

Junction-to-Case, Single Leg Conducting

Weight

Typ.

—

Max.

1.0

Units

R_θJC

°C/W

2.6

—

Note: D.C. = 50% rect. wave

1/2 sine wave, 60 Hz , P.W. = 8.33 ms

www.irf.com

9/18/98

12 3 4 5

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