Datasheet > HF40A060ACB

HF40A060ACB

更新时间： 2024-09-22 19:59:35

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
1页	13K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, 4 INCH, WAFER

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HF40A060ACB 数据手册

PD-2.498

HF40A060ACB

TARGET

HF40A060ACB Hexfred Die in Wafer Form

600 V

Size 40

4" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

T_J= 25°C, I_F= 10A

V_FM

Forward Voltage

1.6V Max.

600V Min.

20µA Max.

BV_R

Reverse Breakdown Voltage

Reverse Leakage Current

T_J= 25°C, I_R= 250µA

T_J= 25°C, V_R=600V

I_RM

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag (1 kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.169" x 0.220"

Wafer Diameter:

100mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5162

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : HFA25TB60

Die Outline

NOTES :

INKDOT

LOCATION

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

4.29

(.169 )

S = SOURCE

G = GATE

4. DIMENSIONAL TOLERANCES

BONDING PADS : < 0.635 TOLERANCE = +/- 0.013

SK = SOURCE KELVIN

IS = CURRENT SENSE

ANODE

4.30

(.1694 )

5.29

(.220 )

WIDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

> 0.635 TOLERANCE = +/- 0.025

> (.0250 ) TOLERANCE = +/- (.0010 )

< 1.270 TOLERANCE = +/- 0.102

< (.050 ) TOLERANCE = +/- (.004 )

> 0.635 TOLERANCE = +/- 0.203

> (.050 ) TOLERANCE = +/- (.008 )

LENGTH

OVERALL DIE

WIDTH

2.98

(.1175 )

LENGTH

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

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