Datasheet > HF40C120ACE

HF40C120ACE

更新时间： 2024-09-21 23:55:43

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HF40C120ACE 数据手册

Preliminary Data Sheet PD-20497 rev. A 11/98

HF40C120ACE

Hexfred Die in Wafer Form

1200 V

Size 40

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

T_J= 25°C, I_F= 8.0A

V_FM

Forward Voltage

2.6V Max.

BV_R

Reverse Breakdown Voltage

Reverse Leakage Current

1200V Min.

T_J= 25°C, I_R= 200µA

T_J= 25°C, V_R= 1200V

I_RM

20µA Max.

Mechanical Data

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.169" x 0.220"

Wafer Diameter

125mm, with std. < 100 > flat

.015" ± .003"

Wafer Thickness

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5170

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Ink Dot Location

Recommended Storage Environment

Reference Standard IR packaged part ( for design ) : HFA16PB120

Die Outline

NOTES:

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. DIMENSIONALTOLERANCES:

BONDING PADS : <0.635TOLERANCE=± 0.013

WIDTH

<(.0250)TOLERANCE=± (.0005)

>0.635TOLERANCE=± 0.025

>(.0250)TOLERANCE=± (.0010)

< 1.270TOLRANCE=± 0.102

< (.050) TOLERANCE = ± (.004)

>1.270 TOLERANCE=± 0.203

> (.050) TOLERANCE = ± (.008)

LENGTH

OVERALLDIE

WIDTH

LENGTH

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