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HF03D060ACE PDF预览

HF03D060ACE

更新时间: 2024-09-25 20:06:39
品牌 Logo 应用领域
英飞凌 - INFINEON 功效二极管
页数 文件大小 规格书
2页 28K
描述
Rectifier Diode, 1 Element, 600V V(RRM)

HF03D060ACE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-XUUC-NReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.63应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-XUUC-N
元件数量:1相数:1
最大输出电流:3 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:UNCASED CHIP
峰值回流温度(摄氏度):260认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:40
Base Number Matches:1

HF03D060ACE 数据手册

 浏览型号HF03D060ACE的Datasheet PDF文件第2页 
PD - 94411  
HF03D060ACE  
Hexfred Die in Wafer Form  
600V  
Features  
• GEN3 Hexfred Technology  
I
F(nom)=3A  
• Low VF  
• Low IRR  
• Low tRR  
V
F(typ)= 1.13V @ IF(nom) @ 25°C  
• Soft Reverse Recovery  
Motor Control Antiparallel Diode  
125mm Wafer  
Benefits  
• Benchmark Efficiency for Motor Control Applications  
• Rugged Transient Performance  
• Low EMI  
Reference Standard IR Package Part: IRGS5B60KD  
• Excellent Current Sharing in Parallel Operation  
• Qualified for Industrial Market  
Electrical Characteristics (Wafer Form)  
Parameter  
Description  
Guaranteed (min, max)  
Test Conditions  
VF  
Forward Voltage Drop  
0.8V min, 1.05V max  
600V min  
IC = 1A, TJ = 25°C  
BVR  
IRM  
Reverse Breakdown Voltage  
Reverse Leakage Current  
TJ = 25°C, IR = 1mA  
TJ = 25°C, VR = 600V  
10µA max  
Mechanical Data  
Nominal Backmetal Composition, (Thickness)  
Nominal Front Metal Composition, (Thickness)  
Dimensions  
Cr- Ni - Ag, (1kA - 4kA - 6kA)  
99% Al/1% Si, (3µm)  
0.065'' x 0.065"  
Wafer Diameter  
125mm, with std. < 100 > flat  
381µm, +/-15µm  
Wafer Thickness, Tolerance  
Relevant Die Mechanical Dwg. Number  
Minimum Street Width  
01 - 5541  
100µm  
Reject Ink Dot Size  
0.25mm diameter minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300°C  
Ink Dot Location  
Recommended Storage Environment  
Recommended Die Attach Conditions  
Die Outline  
www.irf.com  
1
04/19/02  

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