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HER507GP-TP PDF预览

HER507GP-TP

更新时间: 2024-09-24 20:09:31
品牌 Logo 应用领域
美微科 - MCC 功效二极管
页数 文件大小 规格书
3页 638K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DO-201AD,

HER507GP-TP 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.62
其他特性:HIGH RELIABILITY应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:800 V
最大反向电流:5 µA最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

HER507GP-TP 数据手册

 浏览型号HER507GP-TP的Datasheet PDF文件第2页浏览型号HER507GP-TP的Datasheet PDF文件第3页 
HER501GP  
Thru  
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
HER508GP  
Features  
Halogen free available upon request by adding suffix "-HF"  
5.0 Amp Glass  
Passivated High  
Efficient Rectifiers  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
Low forward voltage drop  
High reliability and High surge current capability  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
50 to 1000 Volts  
Maximum Ratings  
Operating Temperature: -65to +150℃  
Storage Temperature: -65to +150℃  
Typical Thermal Resistance: 30/W Junction To Lead  
DO-201AD  
MCC Part  
Number  
Device  
Maximum  
Recurrent  
Maximum Maximum  
Marking  
RMS  
DC  
Peak Reverse  
Voltage  
Voltage  
Blocking  
Voltage  
D
HER501GP HER501GP  
HER502GP HER502GP  
50V  
100V  
200V  
300V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
300V  
400V  
600V  
800V  
1000V  
HER503GP HER503GP  
HER504GP HER504GP  
HER505GP HER505GP  
HER506GP HER506GP  
HER507GP HER507GP  
HER508GP HER508GP  
140V  
210V  
280V  
420V  
560V  
700V  
A
Cathode  
Mark  
B
D
Electrical Characteristics @ 25Unless Otherwise Specified  
Average Forward  
TC = 55℃  
IF(AV)  
IFSM  
5.0A  
Current  
C
Peak Forward Surge  
Current  
160A  
8.3ms, half sine  
Maximum  
Instantaneous  
I
FM = 5.0A;  
Forward Voltage  
HER501GP-HER504GP  
HER505GP  
VF  
TA = 25℃  
1.0V  
1.3V  
1.7V  
DIMENSIONS  
HER506GP-HER508GP  
Maximum DC  
INCHES  
MIN  
MM  
MIN  
DIM  
MAX  
MAX  
NOTE  
Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
A
B
C
.287  
.189  
.048  
.374  
.208  
.052  
---  
7.30  
4.80  
1.20  
9.50  
5.30  
1.30  
---  
TA = 25℃  
5uA  
D
1.000  
25.40  
Maximum Reverse  
Recovery Time  
HER501GP-HER505GP  
HER506GP-HER508GP  
Typical Junction  
Capacitance  
Trr  
CJ  
50ns  
75ns  
IF=0.5A, IR=1.0A  
IRR=0.25A  
Measured at  
HER501GP-HER505GP  
HER506GP-HER508GP  
100pF  
65pF  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 3  
Revision: E  
2014/10/13  

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