Datasheet > HEBST39.40

HEBST39.40

更新时间： 2022-02-26 11:52:30

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
3页	243K
描述
GENERAL PURPOSE TRANSISTOR

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数据手册

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HEBST39.40 数据手册

HEBST39.40(NPN)

GENERAL PURPOSE TRANSISTOR

REPLACEMENT TYPE : BST39.BST40

FEATURES



Low Current

High Voltage

SOT-89

(T = 25°C unless otherwise noted)

MAXIMUM RATINGS

1:BASE

2:COLLECTOR 3:EMITTER

Parameter

Symbol

V_CBO

Value

400

Unit

MARKING:

BST39:AT1

BST40:AT2

BST39

BST40

BST39

Collector-Base Voltage

Collector-Emitter Voltage

300

350

V_CEO

BST40

250

Emitter-Base Voltage

V_EBO

I_C

°C/W

°C

100

Collector Current-Continuous

Collector Power Dissipation

P_C

500

Thermal Resistance From Junction to Ambient

Junction Temperature

R_θJA

T_J

250

150

Storage Temperature

T_stg

-55~+150

°C

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted

)

Parameter

Symbol Test conditions

Min

400

300

350

250

Typ

Max

Unit

Collector-Base Breakdown Voltage

BST39

BST40

BST39

BST40

V_CBO

I_C=100uA,I_E=0

I_C=1mA,I_B=0

Collector-Emitter Breakdown Voltage

V_CEO

V_EBO

I_CBO

I_EBO

h_FE

I_E=100uA,I_C=0

V_CB=300V,I_E=0

V_EB=5V,I_C=0

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

100

V_CE=10V,I_C=20mA

I_C=50mA,I_B=4mA

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

V_CE

0.5

(sat)

f_T

V_CE=10V,I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

MHz

Collector Output Capacitance

C_ob

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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