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HDC3022DEJT PDF预览

HDC3022DEJT

更新时间: 2022-05-14 22:18:54
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德州仪器 - TI /
页数 文件大小 规格书
51页 2002K
描述
HDC302x High-Accuracy, Low-Power, Digital Humidity and Temperature Sensor With Ultra-Low Drift

HDC3022DEJT 数据手册

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HDC3020  
www.ti.com  
UNIT  
SNAS778 – JUNE 2021  
TA = -40°C to 125°C, VDD = 1.62V to 5.50V (unless otherwise noted), Typical Specifications are TA = 25°C, VDD  
1.8V unless otherwise noted  
=
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
at ambient room tempTA = 25°C, 10% to 90%  
RH  
Low Power Mode 0 (lowest noise)  
±0.02  
TA = 25°C, 10% to 90% RH  
Low Power Mode 1  
TBD  
TBD  
RHREP  
Repeatability  
%RH  
TA = 25°C, 10% to 90% RH  
Low Power Mode 2  
TA = 25°C, 10% to 90% RH  
Low Power Mode 3 (lowest power)  
TBD  
±1  
RHHYS  
RHRT  
Hysteresis (5)  
TA = 25°C, 10% to 90% RH  
%RH  
s
TA = 25°C, 10% to 90% RH  
t63% step.  
Response Time(6) (7)  
Long-term Drift (4)  
4
RHLTD  
0.21  
%RH/yr  
Temperature Sensor  
-20°C ≤ TA ≤ 60°C  
±0.1  
±0.2  
±0.3  
±0.4  
TEMPACC Accuracy  
°C  
°C  
-40°C ≤ TA < -20°C or 60°C < TA ≤ 125°C  
Low Power Mode 0 (lowest noise)  
Low Power Mode 1  
±0.04  
TBD  
TEMPREP Repeatability  
Low Power Mode 2  
TBD  
Low Power Mode 3 (lowest power)  
±0.07  
25C <TA< 75C  
t63% step  
TEMPRT Response Time (in air)(6) (7)  
TBD  
s
TEMPLTD Long Term Drift  
±0.03  
0.3*VDD  
0.4  
°C/yr  
SCL, SDA Pins  
VIL  
LOW-level input voltage  
HIGH-level input voltage  
LOW-level output voltage  
V
V
V
VIH  
VOL  
0.7*VDD  
VDD–0.2  
IOL = 3 mA  
Control Pins  
High-level Output Voltage -  
VOH_ALERT  
IOH = -100 µA  
IOL = 100 µA  
V
V
ALERT  
Low-level Output Voltage -  
ALERT  
VOL_ALERT  
0.2  
VIH_ADDR High Level Input Voltage - ADDR  
VIL_ADDR Low Level Input Voltage - ADDR  
0.7*VDD  
0.7*VDD  
V
V
0.3*VDD  
High Level Input Voltage -  
VIH_ADDR1  
ADDR1  
V
V
V
VIL_ADDR1 Low Level Input Voltage - ADDR1  
0.3*VDD  
High Level Input Voltage -  
VIH_RESET  
RESET  
0.7*VDD  
VIL_RESET Low Level Input Voltage - RESET  
0.3*VDD  
V
II_ADDR  
Input Leakage Current - ADDR  
VI = VDD or GND  
-1  
-1  
1
1
µA  
µA  
II_ADDR1  
Input Leakage Current - ADDR1 VI = VDD or GND  
EEPROM (T, RH offset)  
OSEND  
OSRET  
Program Endurance  
Data Retention Time  
1000  
10  
50000  
100  
Cycles  
Years  
100% Power-On hours  
(1) Does not include I2C read/write communication or pullup resistor current through SCL and SDA  
(2) Average current consumption while conversion is in progress  
(3) Excludes hysteresis and long-term drift  
Copyright © 2021 Texas Instruments Incorporated  
6
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Product Folder Links: HDC3020  
 
 
 

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