Datasheet > HD5004

HD5004

更新时间： 2024-02-18 19:40:50

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
2页	29K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,

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技术参数
数据手册

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HD5004 技术参数

生命周期：	Obsolete	包装说明：	O-XUPF-P1
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
应用：	GENERAL PURPOSE	外壳连接：	ANODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
JESD-30 代码：	O-XUPF-P1	最大非重复峰值正向电流：	500 A
元件数量：	1	相数：	1
端子数量：	1	最高工作温度：	175 °C
最低工作温度：	-65 °C	最大输出电流：	50 A
封装主体材料：	UNSPECIFIED	封装形状：	ROUND
封装形式：	PRESS FIT	最大重复峰值反向电压：	400 V
最大反向电流：	5 µA	表面贴装：	NO
端子形式：	PIN/PEG	端子位置：	UPPER
Base Number Matches：	1

HD5004 数据手册

HD5000 – HD5006

50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



Low Leakage

Low Cost

High Surge Current Capability

Typical IR less than 5.0µA

C-Band Terminal Construction

Anode +

12mm Hitachi

Mechanical Data

Dim

Min

11.80

3.65

Max

12.00

3.85



Case: 12mm Hitachi Type Press-Fit

Terminals: Contact Areas Readily Solderable

Polarity: Cathode to Case (Reverse Units Are

Available Upon Request and Are Designated

By A “R” Suffix, i.e. HD5002R or HD5004R)

Polarity: White Color Equals Standard,

Black Color Equals Reverse Polarity

1.35

1.55

D (+)*

D (-)*

18.00

20.00

22.00

24.00

All Dimensions in mm



(+)*: Standard Polarity

(-)*: Reverse Polarity



Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol HD5000 HD5001 HD5002 HD5003 HD5004 HD5005 HD5006 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

300

400

280

500

350

600

420

RMS Reverse Voltage

VR(RMS)

210

Average Rectified Output Current @T_C= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

500

1.0

Forward Voltage

@I_F= 50A

VFM

IRM

Peak Reverse Current

@T_A= 25°C

5.0

500

µA

At Rated DC Blocking Voltage

@T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

300

1.2

°C/W

°C

RθJC

TJ, TSTG

-65 to +175

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance: Junction to case, single side cooled.

Revision: April, 2012

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型号	品牌	描述	获取价格	数据表
HD5004-LF	WTE	Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,	获取价格
HD5004R	WTE	Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,	获取价格
HD5004R-LF	WTE	Rectifier Diode, 1 Phase, 1 Element, 50A, 400V V(RRM), Silicon,	获取价格
HD5005	WTE	50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE	获取价格
HD5006	WTE	50A GLASS PASSIVATED HITACHI TYPE PRESS-FIT DIODE	获取价格
HD5006R	WTE	Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon,	获取价格