Datasheet > HD1L3N-T2-AZ

HD1L3N-T2-AZ

更新时间： 2024-02-12 22:40:39

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体管
页数	文件大小	规格书
8页	514K
描述
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

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HD1L3N-T2-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
零件包装代码：	POMM	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.78
最大集电极电流 (IC)：	1 A	最小直流电流增益 (hFE)：	200
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

HD1L3N-T2-AZ 数据手册

DATA SHEET

COMPOUND TRANSISTOR

HD1 SERIES

on-chip resistor NPN silicon epitaxial transistor

For mid-speed switching

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

High current drives such as IC outputs and actuators available

On-chip bias resistor

Low power consumption during drive

HD1 SERIES LISTS

Products

HD1A3M

HD1F3P

HD1L3N

HD1A4M

HD1L2Q

HD1F2Q

HD1A4A

Marking

R1 (kΩ)

1.0

R2 (kΩ)

1.0

2.2

4.7

0.47

0.22

−

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

VCBO

Ratings

Unit

VCEO

VEBO

IC(DC)

1.0

Note1

2.0

I^C(pulse)

IB(DC)

Note2

P^T

0.02

2.0

Total power dissipation

Junction temperature

Storage temperature

°C

Tstg

150

−55 to +150

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50 %

2. When 0.7 mm × 16 cm²ceramic board is used

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16182EJ4V0DS00 (4th edition)

Date Published August 2006 NS CP(K)

Printed in Japan

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

1 234 5 6 7 8

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